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Fabrication and characterization of GaN-based light-emitting diodes without pre-activation of p-type GaN
We fabricated GaN-based light-emitting diodes (LEDs) without pre-activation of p-type GaN. During the fabrication process, a 100-nm-thick indium tin oxide film was served as the p-type contact layer and annealed at 500°C in N(2) ambient for 20 min to increase its transparency as well as to activate...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2015
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385135/ https://www.ncbi.nlm.nih.gov/pubmed/25852381 http://dx.doi.org/10.1186/s11671-015-0792-8 |