Cargando…
A high-performance complementary inverter based on transition metal dichalcogenide field-effect transistors
For several years, graphene has been the focus of much attention due to its peculiar characteristics, and it is now considered to be a representative 2-dimensional (2D) material. Even though many research groups have studied on the graphene, its intrinsic nature of a zero band-gap, limits its use in...
Autores principales: | Cho, Ah-Jin, Park, Kee Chan, Kwon, Jang-Yeon |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer US
2015
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385225/ https://www.ncbi.nlm.nih.gov/pubmed/25852410 http://dx.doi.org/10.1186/s11671-015-0827-1 |
Ejemplares similares
-
Influence of post-annealing on the off current of MoS(2) field-effect transistors
por: Namgung, Seok Daniel, et al.
Publicado: (2015) -
The Role of Air Adsorption in Inverted Ultrathin Black Phosphorus Field-Effect Transistors
por: Li, Qianqian, et al.
Publicado: (2016) -
Lattice Dynamics of the Rhenium and Technetium Dichalcogenides
por: Wolverson, Daniel, et al.
Publicado: (2016) -
Conversion of Multi-layered MoTe(2) Transistor Between P-Type and N-Type and Their Use in Inverter
por: Liu, Junku, et al.
Publicado: (2018) -
Multi-Layer SnSe Nanoflake Field-Effect Transistors with Low-Resistance Au Ohmic Contacts
por: Cho, Sang-Hyeok, et al.
Publicado: (2017)