Investigation of GaInAs strain reducing layer combined with InAs quantum dots embedded in Ga(In)As subcell of triple junction GaInP/Ga(In)As/Ge solar cell

The InAs/GaAs quantum dots structure embedded in GaInP/Ga(In)As/Ge triple junction solar cell with and without Ga(0.90)In(0.10)As strain reducing layer was investigated. Conversion efficiency of 33.91% at 1,000 suns AM 1.5D with Ga(0.90)In(0.10)As strain reducing layer was demonstrated. A 1.19% impr...

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Detalles Bibliográficos
Autores principales: Li, Senlin, Bi, Jingfeng, Li, Mingyang, Yang, Meijia, Song, Minghui, Liu, Guanzhou, Xiong, Weiping, Li, Yang, Fang, Yanyan, Chen, Changqing, Lin, Guijiang, Chen, Wenjun, Wu, Chaoyu, Wang, Duxiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385240/
https://www.ncbi.nlm.nih.gov/pubmed/25852406
http://dx.doi.org/10.1186/s11671-015-0821-7
Descripción
Sumario:The InAs/GaAs quantum dots structure embedded in GaInP/Ga(In)As/Ge triple junction solar cell with and without Ga(0.90)In(0.10)As strain reducing layer was investigated. Conversion efficiency of 33.91% at 1,000 suns AM 1.5D with Ga(0.90)In(0.10)As strain reducing layer was demonstrated. A 1.19% improvement of the conversion efficiency was obtained via inserting the Ga(0.90)In(0.10)As strain reducing layer. The main contribution of this improvement was from the increase of the short-circuit current, which is caused by the reduction of the Shockley–Read–Hall recombination centers. Consequently, there was a decrease in open circuit voltage due to the lower thermal activation energy of confined carriers in Ga(0.9)In(0.1)As than GaAs and a reduction in the effective band gap of quantum dots.

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