Investigation of GaInAs strain reducing layer combined with InAs quantum dots embedded in Ga(In)As subcell of triple junction GaInP/Ga(In)As/Ge solar cell

The InAs/GaAs quantum dots structure embedded in GaInP/Ga(In)As/Ge triple junction solar cell with and without Ga(0.90)In(0.10)As strain reducing layer was investigated. Conversion efficiency of 33.91% at 1,000 suns AM 1.5D with Ga(0.90)In(0.10)As strain reducing layer was demonstrated. A 1.19% impr...

Descripción completa

Detalles Bibliográficos
Autores principales: Li, Senlin, Bi, Jingfeng, Li, Mingyang, Yang, Meijia, Song, Minghui, Liu, Guanzhou, Xiong, Weiping, Li, Yang, Fang, Yanyan, Chen, Changqing, Lin, Guijiang, Chen, Wenjun, Wu, Chaoyu, Wang, Duxiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385240/
https://www.ncbi.nlm.nih.gov/pubmed/25852406
http://dx.doi.org/10.1186/s11671-015-0821-7
_version_ 1782365030638944256
author Li, Senlin
Bi, Jingfeng
Li, Mingyang
Yang, Meijia
Song, Minghui
Liu, Guanzhou
Xiong, Weiping
Li, Yang
Fang, Yanyan
Chen, Changqing
Lin, Guijiang
Chen, Wenjun
Wu, Chaoyu
Wang, Duxiang
author_facet Li, Senlin
Bi, Jingfeng
Li, Mingyang
Yang, Meijia
Song, Minghui
Liu, Guanzhou
Xiong, Weiping
Li, Yang
Fang, Yanyan
Chen, Changqing
Lin, Guijiang
Chen, Wenjun
Wu, Chaoyu
Wang, Duxiang
author_sort Li, Senlin
collection PubMed
description The InAs/GaAs quantum dots structure embedded in GaInP/Ga(In)As/Ge triple junction solar cell with and without Ga(0.90)In(0.10)As strain reducing layer was investigated. Conversion efficiency of 33.91% at 1,000 suns AM 1.5D with Ga(0.90)In(0.10)As strain reducing layer was demonstrated. A 1.19% improvement of the conversion efficiency was obtained via inserting the Ga(0.90)In(0.10)As strain reducing layer. The main contribution of this improvement was from the increase of the short-circuit current, which is caused by the reduction of the Shockley–Read–Hall recombination centers. Consequently, there was a decrease in open circuit voltage due to the lower thermal activation energy of confined carriers in Ga(0.9)In(0.1)As than GaAs and a reduction in the effective band gap of quantum dots.
format Online
Article
Text
id pubmed-4385240
institution National Center for Biotechnology Information
language English
publishDate 2015
publisher Springer US
record_format MEDLINE/PubMed
spelling pubmed-43852402015-04-07 Investigation of GaInAs strain reducing layer combined with InAs quantum dots embedded in Ga(In)As subcell of triple junction GaInP/Ga(In)As/Ge solar cell Li, Senlin Bi, Jingfeng Li, Mingyang Yang, Meijia Song, Minghui Liu, Guanzhou Xiong, Weiping Li, Yang Fang, Yanyan Chen, Changqing Lin, Guijiang Chen, Wenjun Wu, Chaoyu Wang, Duxiang Nanoscale Res Lett Nano Express The InAs/GaAs quantum dots structure embedded in GaInP/Ga(In)As/Ge triple junction solar cell with and without Ga(0.90)In(0.10)As strain reducing layer was investigated. Conversion efficiency of 33.91% at 1,000 suns AM 1.5D with Ga(0.90)In(0.10)As strain reducing layer was demonstrated. A 1.19% improvement of the conversion efficiency was obtained via inserting the Ga(0.90)In(0.10)As strain reducing layer. The main contribution of this improvement was from the increase of the short-circuit current, which is caused by the reduction of the Shockley–Read–Hall recombination centers. Consequently, there was a decrease in open circuit voltage due to the lower thermal activation energy of confined carriers in Ga(0.9)In(0.1)As than GaAs and a reduction in the effective band gap of quantum dots. Springer US 2015-03-07 /pmc/articles/PMC4385240/ /pubmed/25852406 http://dx.doi.org/10.1186/s11671-015-0821-7 Text en © Li et al.; licensee Springer. 2015 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited.
spellingShingle Nano Express
Li, Senlin
Bi, Jingfeng
Li, Mingyang
Yang, Meijia
Song, Minghui
Liu, Guanzhou
Xiong, Weiping
Li, Yang
Fang, Yanyan
Chen, Changqing
Lin, Guijiang
Chen, Wenjun
Wu, Chaoyu
Wang, Duxiang
Investigation of GaInAs strain reducing layer combined with InAs quantum dots embedded in Ga(In)As subcell of triple junction GaInP/Ga(In)As/Ge solar cell
title Investigation of GaInAs strain reducing layer combined with InAs quantum dots embedded in Ga(In)As subcell of triple junction GaInP/Ga(In)As/Ge solar cell
title_full Investigation of GaInAs strain reducing layer combined with InAs quantum dots embedded in Ga(In)As subcell of triple junction GaInP/Ga(In)As/Ge solar cell
title_fullStr Investigation of GaInAs strain reducing layer combined with InAs quantum dots embedded in Ga(In)As subcell of triple junction GaInP/Ga(In)As/Ge solar cell
title_full_unstemmed Investigation of GaInAs strain reducing layer combined with InAs quantum dots embedded in Ga(In)As subcell of triple junction GaInP/Ga(In)As/Ge solar cell
title_short Investigation of GaInAs strain reducing layer combined with InAs quantum dots embedded in Ga(In)As subcell of triple junction GaInP/Ga(In)As/Ge solar cell
title_sort investigation of gainas strain reducing layer combined with inas quantum dots embedded in ga(in)as subcell of triple junction gainp/ga(in)as/ge solar cell
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385240/
https://www.ncbi.nlm.nih.gov/pubmed/25852406
http://dx.doi.org/10.1186/s11671-015-0821-7
work_keys_str_mv AT lisenlin investigationofgainasstrainreducinglayercombinedwithinasquantumdotsembeddedingainassubcelloftriplejunctiongainpgainasgesolarcell
AT bijingfeng investigationofgainasstrainreducinglayercombinedwithinasquantumdotsembeddedingainassubcelloftriplejunctiongainpgainasgesolarcell
AT limingyang investigationofgainasstrainreducinglayercombinedwithinasquantumdotsembeddedingainassubcelloftriplejunctiongainpgainasgesolarcell
AT yangmeijia investigationofgainasstrainreducinglayercombinedwithinasquantumdotsembeddedingainassubcelloftriplejunctiongainpgainasgesolarcell
AT songminghui investigationofgainasstrainreducinglayercombinedwithinasquantumdotsembeddedingainassubcelloftriplejunctiongainpgainasgesolarcell
AT liuguanzhou investigationofgainasstrainreducinglayercombinedwithinasquantumdotsembeddedingainassubcelloftriplejunctiongainpgainasgesolarcell
AT xiongweiping investigationofgainasstrainreducinglayercombinedwithinasquantumdotsembeddedingainassubcelloftriplejunctiongainpgainasgesolarcell
AT liyang investigationofgainasstrainreducinglayercombinedwithinasquantumdotsembeddedingainassubcelloftriplejunctiongainpgainasgesolarcell
AT fangyanyan investigationofgainasstrainreducinglayercombinedwithinasquantumdotsembeddedingainassubcelloftriplejunctiongainpgainasgesolarcell
AT chenchangqing investigationofgainasstrainreducinglayercombinedwithinasquantumdotsembeddedingainassubcelloftriplejunctiongainpgainasgesolarcell
AT linguijiang investigationofgainasstrainreducinglayercombinedwithinasquantumdotsembeddedingainassubcelloftriplejunctiongainpgainasgesolarcell
AT chenwenjun investigationofgainasstrainreducinglayercombinedwithinasquantumdotsembeddedingainassubcelloftriplejunctiongainpgainasgesolarcell
AT wuchaoyu investigationofgainasstrainreducinglayercombinedwithinasquantumdotsembeddedingainassubcelloftriplejunctiongainpgainasgesolarcell
AT wangduxiang investigationofgainasstrainreducinglayercombinedwithinasquantumdotsembeddedingainassubcelloftriplejunctiongainpgainasgesolarcell

Ejemplares similares