Investigation on the passivated Si/Al(2)O(3) interface fabricated by non-vacuum spatial atomic layer deposition system

Currently, aluminum oxide stacked with silicon nitride (Al(2)O(3)/SiN(x):H) is a promising rear passivation material for high-efficiency P-type passivated emitter and rear cell (PERC). It has been indicated that atomic layer deposition system (ALD) is much more suitable to prepare high-quality Al(2)...

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Detalles Bibliográficos
Autores principales: Lien, Shui-Yang, Yang, Chih-Hsiang, Wu, Kuei-Ching, Kung, Chung-Yuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385260/
https://www.ncbi.nlm.nih.gov/pubmed/25852389
http://dx.doi.org/10.1186/s11671-015-0803-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385260/
https://www.ncbi.nlm.nih.gov/pubmed/25852389
http://dx.doi.org/10.1186/s11671-015-0803-9

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