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Investigation on the passivated Si/Al(2)O(3) interface fabricated by non-vacuum spatial atomic layer deposition system
Currently, aluminum oxide stacked with silicon nitride (Al(2)O(3)/SiN(x):H) is a promising rear passivation material for high-efficiency P-type passivated emitter and rear cell (PERC). It has been indicated that atomic layer deposition system (ALD) is much more suitable to prepare high-quality Al(2)...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2015
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385260/ https://www.ncbi.nlm.nih.gov/pubmed/25852389 http://dx.doi.org/10.1186/s11671-015-0803-9 |