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Excellent resistive switching properties of atomic layer-deposited Al(2)O(3)/HfO(2)/Al(2)O(3) trilayer structures for non-volatile memory applications
We have demonstrated a flexible resistive random access memory unit with trilayer structure by atomic layer deposition (ALD). The device unit is composed of Al(2)O(3)/HfO(2)/Al(2)O(3)-based functional stacks on TiN-coated Si substrate. The cross-sectional HRTEM image and XPS depth profile of Al(2)O(...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer US
2015
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385330/ https://www.ncbi.nlm.nih.gov/pubmed/25852426 http://dx.doi.org/10.1186/s11671-015-0846-y |
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author | Wang, Lai-Guo Qian, Xu Cao, Yan-Qiang Cao, Zheng-Yi Fang, Guo-Yong Li, Ai-Dong Wu, Di |
author_facet | Wang, Lai-Guo Qian, Xu Cao, Yan-Qiang Cao, Zheng-Yi Fang, Guo-Yong Li, Ai-Dong Wu, Di |
author_sort | Wang, Lai-Guo |
collection | PubMed |
description | We have demonstrated a flexible resistive random access memory unit with trilayer structure by atomic layer deposition (ALD). The device unit is composed of Al(2)O(3)/HfO(2)/Al(2)O(3)-based functional stacks on TiN-coated Si substrate. The cross-sectional HRTEM image and XPS depth profile of Al(2)O(3)/HfO(2)/Al(2)O(3) on TiN-coated Si confirm the existence of interfacial layers between trilayer structures of Al(2)O(3)/HfO(2)/Al(2)O(3) after 600°C post-annealing. The memory units of Pt/Al(2)O(3)/HfO(2)/Al(2)O(3)/TiN/Si exhibit a typical bipolar, reliable, and reproducible resistive switching behavior, such as stable resistance ratio (>10) of OFF/ON states, sharp distribution of set and reset voltages, better switching endurance up to 10(3) cycles, and longer data retention at 85°C over 10 years. The possible switching mechanism of trilayer structure of Al(2)O(3)/HfO(2)/Al(2)O(3) has been proposed. The trilayer structure device units of Al(2)O(3)/HfO(2)/Al(2)O(3) on TiN-coated Si prepared by ALD may be a potential candidate for oxide-based resistive random access memory. |
format | Online Article Text |
id | pubmed-4385330 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2015 |
publisher | Springer US |
record_format | MEDLINE/PubMed |
spelling | pubmed-43853302015-04-07 Excellent resistive switching properties of atomic layer-deposited Al(2)O(3)/HfO(2)/Al(2)O(3) trilayer structures for non-volatile memory applications Wang, Lai-Guo Qian, Xu Cao, Yan-Qiang Cao, Zheng-Yi Fang, Guo-Yong Li, Ai-Dong Wu, Di Nanoscale Res Lett Nano Express We have demonstrated a flexible resistive random access memory unit with trilayer structure by atomic layer deposition (ALD). The device unit is composed of Al(2)O(3)/HfO(2)/Al(2)O(3)-based functional stacks on TiN-coated Si substrate. The cross-sectional HRTEM image and XPS depth profile of Al(2)O(3)/HfO(2)/Al(2)O(3) on TiN-coated Si confirm the existence of interfacial layers between trilayer structures of Al(2)O(3)/HfO(2)/Al(2)O(3) after 600°C post-annealing. The memory units of Pt/Al(2)O(3)/HfO(2)/Al(2)O(3)/TiN/Si exhibit a typical bipolar, reliable, and reproducible resistive switching behavior, such as stable resistance ratio (>10) of OFF/ON states, sharp distribution of set and reset voltages, better switching endurance up to 10(3) cycles, and longer data retention at 85°C over 10 years. The possible switching mechanism of trilayer structure of Al(2)O(3)/HfO(2)/Al(2)O(3) has been proposed. The trilayer structure device units of Al(2)O(3)/HfO(2)/Al(2)O(3) on TiN-coated Si prepared by ALD may be a potential candidate for oxide-based resistive random access memory. Springer US 2015-03-19 /pmc/articles/PMC4385330/ /pubmed/25852426 http://dx.doi.org/10.1186/s11671-015-0846-y Text en © Wang et al.; licensee BioMed Central. 2015 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited. |
spellingShingle | Nano Express Wang, Lai-Guo Qian, Xu Cao, Yan-Qiang Cao, Zheng-Yi Fang, Guo-Yong Li, Ai-Dong Wu, Di Excellent resistive switching properties of atomic layer-deposited Al(2)O(3)/HfO(2)/Al(2)O(3) trilayer structures for non-volatile memory applications |
title | Excellent resistive switching properties of atomic layer-deposited Al(2)O(3)/HfO(2)/Al(2)O(3) trilayer structures for non-volatile memory applications |
title_full | Excellent resistive switching properties of atomic layer-deposited Al(2)O(3)/HfO(2)/Al(2)O(3) trilayer structures for non-volatile memory applications |
title_fullStr | Excellent resistive switching properties of atomic layer-deposited Al(2)O(3)/HfO(2)/Al(2)O(3) trilayer structures for non-volatile memory applications |
title_full_unstemmed | Excellent resistive switching properties of atomic layer-deposited Al(2)O(3)/HfO(2)/Al(2)O(3) trilayer structures for non-volatile memory applications |
title_short | Excellent resistive switching properties of atomic layer-deposited Al(2)O(3)/HfO(2)/Al(2)O(3) trilayer structures for non-volatile memory applications |
title_sort | excellent resistive switching properties of atomic layer-deposited al(2)o(3)/hfo(2)/al(2)o(3) trilayer structures for non-volatile memory applications |
topic | Nano Express |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385330/ https://www.ncbi.nlm.nih.gov/pubmed/25852426 http://dx.doi.org/10.1186/s11671-015-0846-y |
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