Excellent resistive switching properties of atomic layer-deposited Al(2)O(3)/HfO(2)/Al(2)O(3) trilayer structures for non-volatile memory applications

We have demonstrated a flexible resistive random access memory unit with trilayer structure by atomic layer deposition (ALD). The device unit is composed of Al(2)O(3)/HfO(2)/Al(2)O(3)-based functional stacks on TiN-coated Si substrate. The cross-sectional HRTEM image and XPS depth profile of Al(2)O(...

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Detalles Bibliográficos
Autores principales: Wang, Lai-Guo, Qian, Xu, Cao, Yan-Qiang, Cao, Zheng-Yi, Fang, Guo-Yong, Li, Ai-Dong, Wu, Di
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385330/
https://www.ncbi.nlm.nih.gov/pubmed/25852426
http://dx.doi.org/10.1186/s11671-015-0846-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385330/
https://www.ncbi.nlm.nih.gov/pubmed/25852426
http://dx.doi.org/10.1186/s11671-015-0846-y

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