Mie resonance-mediated antireflection effects of Si nanocone arrays fabricated on 8-in. wafers using a nanoimprint technique

We fabricated 8-in. Si nanocone (NC) arrays using a nanoimprint technique and investigated their optical characteristics. The NC arrays exhibited remarkable antireflection effects; the optical reflectance was less than 10% in the visible wavelength range. The photoluminescence intensity of the NC ar...

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Detalles Bibliográficos
Autores principales: Kim, Eunah, Cho, Yunae, Park, Kwang-Tae, Choi, Jun-Hyuk, Lim, Seung-Hyuk, Cho, Yong-Hoon, Nam, Yoon-Ho, Lee, Jung-Ho, Kim, Dong-Wook
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4395620/
https://www.ncbi.nlm.nih.gov/pubmed/25897308
http://dx.doi.org/10.1186/s11671-015-0865-8
Descripción
Sumario:We fabricated 8-in. Si nanocone (NC) arrays using a nanoimprint technique and investigated their optical characteristics. The NC arrays exhibited remarkable antireflection effects; the optical reflectance was less than 10% in the visible wavelength range. The photoluminescence intensity of the NC arrays was an order of magnitude larger than that of a planar wafer. Optical simulations and analyses suggested that the Mie resonance reduced effective refractive index, and multiple scattering in the NCs enabled the drastic decrease in reflection. PACS: 88.40.H-; 88.40.jp; 81.07.Gf

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