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Controlling band alignments by artificial interface dipoles at perovskite heterointerfaces
The concept ‘the interface is the device' is embodied in a wide variety of interfacial electronic phenomena and associated applications in oxide materials, ranging from catalysts and clean energy systems to emerging multifunctional devices. Many device properties are defined by the band alignme...
Autores principales: | , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Pub. Group
2015
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4396378/ https://www.ncbi.nlm.nih.gov/pubmed/25849738 http://dx.doi.org/10.1038/ncomms7759 |
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author | Yajima, Takeaki Hikita, Yasuyuki Minohara, Makoto Bell, Christopher Mundy, Julia A. Kourkoutis, Lena F. Muller, David A. Kumigashira, Hiroshi Oshima, Masaharu Hwang, Harold Y. |
author_facet | Yajima, Takeaki Hikita, Yasuyuki Minohara, Makoto Bell, Christopher Mundy, Julia A. Kourkoutis, Lena F. Muller, David A. Kumigashira, Hiroshi Oshima, Masaharu Hwang, Harold Y. |
author_sort | Yajima, Takeaki |
collection | PubMed |
description | The concept ‘the interface is the device' is embodied in a wide variety of interfacial electronic phenomena and associated applications in oxide materials, ranging from catalysts and clean energy systems to emerging multifunctional devices. Many device properties are defined by the band alignment, which is often influenced by interface dipoles. On the other hand, the ability to purposefully create and control interface dipoles is a relatively unexplored degree of freedom for perovskite oxides, which should be particularly effective for such ionic materials. Here we demonstrate tuning the band alignment in perovskite metal-semiconductor heterojunctions over a broad range of 1.7 eV. This is achieved by the insertion of positive or negative charges at the interface, and the resultant dipole formed by the induced screening charge. This approach can be broadly used in applications where decoupling the band alignment from the constituent work functions and electron affinities can enhance device functionality. |
format | Online Article Text |
id | pubmed-4396378 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2015 |
publisher | Nature Pub. Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-43963782015-04-24 Controlling band alignments by artificial interface dipoles at perovskite heterointerfaces Yajima, Takeaki Hikita, Yasuyuki Minohara, Makoto Bell, Christopher Mundy, Julia A. Kourkoutis, Lena F. Muller, David A. Kumigashira, Hiroshi Oshima, Masaharu Hwang, Harold Y. Nat Commun Article The concept ‘the interface is the device' is embodied in a wide variety of interfacial electronic phenomena and associated applications in oxide materials, ranging from catalysts and clean energy systems to emerging multifunctional devices. Many device properties are defined by the band alignment, which is often influenced by interface dipoles. On the other hand, the ability to purposefully create and control interface dipoles is a relatively unexplored degree of freedom for perovskite oxides, which should be particularly effective for such ionic materials. Here we demonstrate tuning the band alignment in perovskite metal-semiconductor heterojunctions over a broad range of 1.7 eV. This is achieved by the insertion of positive or negative charges at the interface, and the resultant dipole formed by the induced screening charge. This approach can be broadly used in applications where decoupling the band alignment from the constituent work functions and electron affinities can enhance device functionality. Nature Pub. Group 2015-04-07 /pmc/articles/PMC4396378/ /pubmed/25849738 http://dx.doi.org/10.1038/ncomms7759 Text en Copyright © 2015, Nature Publishing Group, a division of Macmillan Publishers Limited. All Rights Reserved. http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
spellingShingle | Article Yajima, Takeaki Hikita, Yasuyuki Minohara, Makoto Bell, Christopher Mundy, Julia A. Kourkoutis, Lena F. Muller, David A. Kumigashira, Hiroshi Oshima, Masaharu Hwang, Harold Y. Controlling band alignments by artificial interface dipoles at perovskite heterointerfaces |
title | Controlling band alignments by artificial interface dipoles at perovskite heterointerfaces |
title_full | Controlling band alignments by artificial interface dipoles at perovskite heterointerfaces |
title_fullStr | Controlling band alignments by artificial interface dipoles at perovskite heterointerfaces |
title_full_unstemmed | Controlling band alignments by artificial interface dipoles at perovskite heterointerfaces |
title_short | Controlling band alignments by artificial interface dipoles at perovskite heterointerfaces |
title_sort | controlling band alignments by artificial interface dipoles at perovskite heterointerfaces |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4396378/ https://www.ncbi.nlm.nih.gov/pubmed/25849738 http://dx.doi.org/10.1038/ncomms7759 |
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