Analysis of oxygen vacancy in Co-doped ZnO using the electron density distribution obtained using MEM

Oxygen vacancy (V(O)) strongly affects the properties of oxides. In this study, we used X-ray diffraction (XRD) to study changes in the V(O) concentration as a function of the Co-doping level of ZnO. Rietveld refinement yielded a different result from that determined via X-ray photoelectron spectroscopy (XPS), but additional maximum entropy method (MEM) analysis led it to compensate for the difference. V(O) tended to gradually decrease with increased Co doping, and ferromagnetic behavior was not observed regardless of the Co-doping concentration. MEM analysis demonstrated that reliable information related to the defects in the ZnO-based system can be obtained using X-ray diffraction alone.