Gate Modulation of Graphene-ZnO Nanowire Schottky Diode

Graphene-semiconductor interface is important for the applications in electronic and optoelectronic devices. Here we report the modulation of the electric transport properties of graphene/ZnO nanowire Schottky diode by gate voltage (V(g)). The ideality factor of the graphene/ZnO nanowire Schottky diode is ~1.7, and the Schottky barrier height is ~0.28 eV without external V(g). The Schottky barrier height is sensitive to V(g) due to the variation of Fermi level of graphene. The barrier height increases quickly with sweeping V(g) towards the negative value, while decreases slowly towards the positive V(g). Our results are helpful to understand the fundamental mechanism of the electric transport in graphene-semiconductor Schottky diode.