Decoupling the Lattice Distortion and Charge Doping Effects on the Phase Transition Behavior of VO(2) by Titanium (Ti(4+)) Doping

The mechanism for regulating the critical temperature (T(C)) of metal-insulator transition (MIT) in ions-doped VO(2) systems is still a matter of debate, in particular, the unclear roles of lattice distortion and charge doping effects. To rule out the charge doping effect on the regulation of T(C), we investigated Ti(4+)-doped VO(2) (Ti(x)V(1-x)O(2)) system. It was observed that the T(C) of Ti(x)V(1-x)O(2) samples first slightly decreased and then increased with increasing Ti concentration. X-ray absorption fine structure (XAFS) spectroscopy was used to explore the electronic states and local lattice structures around both Ti and V atoms in Ti(x)V(1-x)O(2) samples. Our results revealed the local structure evolution from the initial anatase to the rutile-like structure around the Ti dopants. Furthermore, the host monoclinic VO(2) lattice, specifically, the VO(6) octahedra would be subtly distorted by Ti doping. The distortion of VO(6) octahedra and the variation of T(C) showed almost the similar trend, confirming the direct effect of local structural perturbations on the phase transition behavior. By comparing other ion-doping systems, we point out that the charge doping is more effective than the lattice distortion in modulating the MIT behavior of VO(2) materials.