Dielectric behavior of ceramic–graphene composites around the percolation threshold

Al(2)O(3)/graphene and BaTiO(3)/graphene composites with different concentrations of the conductive second phase, both below and above the percolation threshold, were prepared by the traditional ceramic processing route followed by spark plasma sintering. It is shown that the addition of graphene pins the grain growth of the ceramic matrix grains, leading to a change of the microstructure at low filler concentrations. As a consequence, the composites exhibit two percolation thresholds and their dielectric properties are not only determined by the dielectric properties of the constituents and their relative fractions but also the microstructure of the composite must be considered. Additionally, a giant increase of the dielectric constant has been found around the percolation thresholds in barium titanate–graphene composites. In particular, values of the dielectric constant up to 45,000 and 15,000 were found at 1 kHz in composites containing 0.4 and 0.6 wt. % graphene, respectively.