Substantial improvement of perovskite solar cells stability by pinhole-free hole transport layer with doping engineering

We fabricated perovskite solar cells using a triple-layer of n-type doped, intrinsic, and p-type doped 2,2′,7,7′-tetrakis(N,N′-di-p-methoxyphenylamine)-9,9′-spirobifluorene (spiro-OMeTAD) (n-i-p) as hole transport layer (HTL) by vacuum evaporation. The doping concentration for n-type doped spiro-OMe...

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Autores principales: Jung, Min-Cherl, Raga, Sonia R., Ono, Luis K., Qi, Yabing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4434888/
https://www.ncbi.nlm.nih.gov/pubmed/25985417
http://dx.doi.org/10.1038/srep09863
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author Jung, Min-Cherl
Raga, Sonia R.
Ono, Luis K.
Qi, Yabing
author_facet Jung, Min-Cherl
Raga, Sonia R.
Ono, Luis K.
Qi, Yabing
author_sort Jung, Min-Cherl
collection PubMed
description We fabricated perovskite solar cells using a triple-layer of n-type doped, intrinsic, and p-type doped 2,2′,7,7′-tetrakis(N,N′-di-p-methoxyphenylamine)-9,9′-spirobifluorene (spiro-OMeTAD) (n-i-p) as hole transport layer (HTL) by vacuum evaporation. The doping concentration for n-type doped spiro-OMeTAD was optimized to adjust the highest occupied molecular orbital of spiro-OMeTAD to match the valence band maximum of perovskite for efficient hole extraction while maintaining a high open circuit voltage. Time-dependent solar cell performance measurements revealed significantly improved air stability for perovskite solar cells with the n-i-p structured spiro-OMeTAD HTL showing sustained efficiencies even after 840 h of air exposure.
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spelling pubmed-44348882015-05-28 Substantial improvement of perovskite solar cells stability by pinhole-free hole transport layer with doping engineering Jung, Min-Cherl Raga, Sonia R. Ono, Luis K. Qi, Yabing Sci Rep Article We fabricated perovskite solar cells using a triple-layer of n-type doped, intrinsic, and p-type doped 2,2′,7,7′-tetrakis(N,N′-di-p-methoxyphenylamine)-9,9′-spirobifluorene (spiro-OMeTAD) (n-i-p) as hole transport layer (HTL) by vacuum evaporation. The doping concentration for n-type doped spiro-OMeTAD was optimized to adjust the highest occupied molecular orbital of spiro-OMeTAD to match the valence band maximum of perovskite for efficient hole extraction while maintaining a high open circuit voltage. Time-dependent solar cell performance measurements revealed significantly improved air stability for perovskite solar cells with the n-i-p structured spiro-OMeTAD HTL showing sustained efficiencies even after 840 h of air exposure. Nature Publishing Group 2015-05-18 /pmc/articles/PMC4434888/ /pubmed/25985417 http://dx.doi.org/10.1038/srep09863 Text en Copyright © 2015, Macmillan Publishers Limited. All rights reserved http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Jung, Min-Cherl
Raga, Sonia R.
Ono, Luis K.
Qi, Yabing
Substantial improvement of perovskite solar cells stability by pinhole-free hole transport layer with doping engineering
title Substantial improvement of perovskite solar cells stability by pinhole-free hole transport layer with doping engineering
title_full Substantial improvement of perovskite solar cells stability by pinhole-free hole transport layer with doping engineering
title_fullStr Substantial improvement of perovskite solar cells stability by pinhole-free hole transport layer with doping engineering
title_full_unstemmed Substantial improvement of perovskite solar cells stability by pinhole-free hole transport layer with doping engineering
title_short Substantial improvement of perovskite solar cells stability by pinhole-free hole transport layer with doping engineering
title_sort substantial improvement of perovskite solar cells stability by pinhole-free hole transport layer with doping engineering
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4434888/
https://www.ncbi.nlm.nih.gov/pubmed/25985417
http://dx.doi.org/10.1038/srep09863
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AT onoluisk substantialimprovementofperovskitesolarcellsstabilitybypinholefreeholetransportlayerwithdopingengineering
AT qiyabing substantialimprovementofperovskitesolarcellsstabilitybypinholefreeholetransportlayerwithdopingengineering

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