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Calculation of the Electronic Parameters of an Al/DNA/p-Si Schottky Barrier Diode Influenced by Alpha Radiation

Many types of materials such as inorganic semiconductors have been employed as detectors for nuclear radiation, the importance of which has increased significantly due to recent nuclear catastrophes. Despite the many advantages of this type of materials, the ability to measure direct cellular or bio...

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Autores principales: Al-Ta’ii, Hassan Maktuff Jaber, Amin, Yusoff Mohd, Periasamy, Vengadesh
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2015
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4435138/
https://www.ncbi.nlm.nih.gov/pubmed/25730484
http://dx.doi.org/10.3390/s150304810
_version_ 1782371859194445824
author Al-Ta’ii, Hassan Maktuff Jaber
Amin, Yusoff Mohd
Periasamy, Vengadesh
author_facet Al-Ta’ii, Hassan Maktuff Jaber
Amin, Yusoff Mohd
Periasamy, Vengadesh
author_sort Al-Ta’ii, Hassan Maktuff Jaber
collection PubMed
description Many types of materials such as inorganic semiconductors have been employed as detectors for nuclear radiation, the importance of which has increased significantly due to recent nuclear catastrophes. Despite the many advantages of this type of materials, the ability to measure direct cellular or biological responses to radiation might improve detector sensitivity. In this context, semiconducting organic materials such as deoxyribonucleic acid or DNA have been studied in recent years. This was established by studying the varying electronic properties of DNA-metal or semiconductor junctions when exposed to radiation. In this work, we investigated the electronics of aluminium (Al)/DNA/silicon (Si) rectifying junctions using their current-voltage (I-V) characteristics when exposed to alpha radiation. Diode parameters such as ideality factor, barrier height and series resistance were determined for different irradiation times. The observed results show significant changes with exposure time or total dosage received. An increased deviation from ideal diode conditions (7.2 to 18.0) was observed when they were bombarded with alpha particles for up to 40 min. Using the conventional technique, barrier height values were observed to generally increase after 2, 6, 10, 20 and 30 min of radiation. The same trend was seen in the values of the series resistance (0.5889–1.423 Ω for 2–8 min). These changes in the electronic properties of the DNA/Si junctions could therefore be utilized in the construction of sensitive alpha particle detectors.
format Online
Article
Text
id pubmed-4435138
institution National Center for Biotechnology Information
language English
publishDate 2015
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-44351382015-05-19 Calculation of the Electronic Parameters of an Al/DNA/p-Si Schottky Barrier Diode Influenced by Alpha Radiation Al-Ta’ii, Hassan Maktuff Jaber Amin, Yusoff Mohd Periasamy, Vengadesh Sensors (Basel) Article Many types of materials such as inorganic semiconductors have been employed as detectors for nuclear radiation, the importance of which has increased significantly due to recent nuclear catastrophes. Despite the many advantages of this type of materials, the ability to measure direct cellular or biological responses to radiation might improve detector sensitivity. In this context, semiconducting organic materials such as deoxyribonucleic acid or DNA have been studied in recent years. This was established by studying the varying electronic properties of DNA-metal or semiconductor junctions when exposed to radiation. In this work, we investigated the electronics of aluminium (Al)/DNA/silicon (Si) rectifying junctions using their current-voltage (I-V) characteristics when exposed to alpha radiation. Diode parameters such as ideality factor, barrier height and series resistance were determined for different irradiation times. The observed results show significant changes with exposure time or total dosage received. An increased deviation from ideal diode conditions (7.2 to 18.0) was observed when they were bombarded with alpha particles for up to 40 min. Using the conventional technique, barrier height values were observed to generally increase after 2, 6, 10, 20 and 30 min of radiation. The same trend was seen in the values of the series resistance (0.5889–1.423 Ω for 2–8 min). These changes in the electronic properties of the DNA/Si junctions could therefore be utilized in the construction of sensitive alpha particle detectors. MDPI 2015-02-26 /pmc/articles/PMC4435138/ /pubmed/25730484 http://dx.doi.org/10.3390/s150304810 Text en © 2015 by the authors; licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Al-Ta’ii, Hassan Maktuff Jaber
Amin, Yusoff Mohd
Periasamy, Vengadesh
Calculation of the Electronic Parameters of an Al/DNA/p-Si Schottky Barrier Diode Influenced by Alpha Radiation
title Calculation of the Electronic Parameters of an Al/DNA/p-Si Schottky Barrier Diode Influenced by Alpha Radiation
title_full Calculation of the Electronic Parameters of an Al/DNA/p-Si Schottky Barrier Diode Influenced by Alpha Radiation
title_fullStr Calculation of the Electronic Parameters of an Al/DNA/p-Si Schottky Barrier Diode Influenced by Alpha Radiation
title_full_unstemmed Calculation of the Electronic Parameters of an Al/DNA/p-Si Schottky Barrier Diode Influenced by Alpha Radiation
title_short Calculation of the Electronic Parameters of an Al/DNA/p-Si Schottky Barrier Diode Influenced by Alpha Radiation
title_sort calculation of the electronic parameters of an al/dna/p-si schottky barrier diode influenced by alpha radiation
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4435138/
https://www.ncbi.nlm.nih.gov/pubmed/25730484
http://dx.doi.org/10.3390/s150304810
work_keys_str_mv AT altaiihassanmaktuffjaber calculationoftheelectronicparametersofanaldnapsischottkybarrierdiodeinfluencedbyalpharadiation
AT aminyusoffmohd calculationoftheelectronicparametersofanaldnapsischottkybarrierdiodeinfluencedbyalpharadiation
AT periasamyvengadesh calculationoftheelectronicparametersofanaldnapsischottkybarrierdiodeinfluencedbyalpharadiation