Cargando…
Simulations of Operation Dynamics of Different Type GaN Particle Sensors
The operation dynamics of the capacitor-type and PIN diode type detectors based on GaN have been simulated using the dynamic and drift-diffusion models. The drift-diffusion current simulations have been implemented by employing the software package Synopsys TCAD Sentaurus. The monopolar and bipolar...
Autores principales: | Gaubas, Eugenijus, Ceponis, Tomas, Kalesinskas, Vidas, Pavlov, Jevgenij, Vysniauskas, Juozas |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2015
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4435160/ https://www.ncbi.nlm.nih.gov/pubmed/25751080 http://dx.doi.org/10.3390/s150305429 |
Ejemplares similares
-
Study of Charge Carrier Transport in GaN Sensors
por: Gaubas, Eugenijus, et al.
Publicado: (2016) -
Luminescence Characteristics of the MOCVD GaN Structures with Chemically Etched Surfaces
por: Ceponis, Tomas, et al.
Publicado: (2023) -
Currents Induced by Injected Charge in Junction Detectors
por: Gaubas, Eugenijus, et al.
Publicado: (2013) -
Evolution of Scintillation and Electrical Characteristics of AlGaN Double-Response Sensors During Proton Irradiation
por: Ceponis, Tomas, et al.
Publicado: (2019) -
5.5 MeV Electron Irradiation-Induced Transformation of Minority Carrier Traps in p-Type Si and Si(1−x)Ge(x) Alloys
por: Pavlov, Jevgenij, et al.
Publicado: (2022)