Negative Differential Resistance in Boron Nitride Graphene Heterostructures: Physical Mechanisms and Size Scaling Analysis

Hexagonal boron nitride (hBN) is drawing increasing attention as an insulator and substrate material to develop next generation graphene-based electronic devices. In this paper, we investigate the quantum transport in heterostructures consisting of a few atomic layers thick hBN film sandwiched betwe...

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Detalles Bibliográficos
Autores principales: Zhao, Y., Wan, Z., Xu, X., Patil, S. R., Hetmaniuk, U., Anantram, M. P.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4438485/
https://www.ncbi.nlm.nih.gov/pubmed/25991076
http://dx.doi.org/10.1038/srep10712

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4438485/
https://www.ncbi.nlm.nih.gov/pubmed/25991076
http://dx.doi.org/10.1038/srep10712

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