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Light interaction in sapphire/MgF(2)/Al triple-layer omnidirectional reflectors in AlGaN-based near ultraviolet light-emitting diodes

This study examined systematically the mechanism of light interaction in the sapphire/MgF(2)/Al triple-layer omnidirectional reflectors (ODR) and its effects on the light output power in near ultraviolet light emitting diodes (NUV-LEDs) with the ODR. The light output power of NUV-LEDs with the tripl...

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Detalles Bibliográficos
Autores principales: Lee, Keon Hwa, Moon, Yong-Tae, Song, June-O, Kwak, Joon Seop
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4443774/
https://www.ncbi.nlm.nih.gov/pubmed/26010378
http://dx.doi.org/10.1038/srep09717
Descripción
Sumario:This study examined systematically the mechanism of light interaction in the sapphire/MgF(2)/Al triple-layer omnidirectional reflectors (ODR) and its effects on the light output power in near ultraviolet light emitting diodes (NUV-LEDs) with the ODR. The light output power of NUV-LEDs with the triple-layer ODR structure increased with decreasing surface roughness of the sapphire backside in the ODR. Theoretical modeling of the roughened surface suggests that the dependence of the reflectance of the triple-layer ODR structure on the surface roughness can be attributed mainly to light absorption by the Al nano-structures and the trapping of scattered light in the MgF(2) layer. Furthermore, the ray tracing simulation based upon the theoretical modeling showed good agreement with the measured reflectance of the ODR structure in diffuse mode.