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Suppression of creep-regime dynamics in epitaxial ferroelectric BiFeO(3) films
Switching dynamics of ferroelectric materials are governed by the response of domain walls to applied electric field. In epitaxial ferroelectric films, thermally-activated ‘creep’ motion plays a significant role in domain wall dynamics, and accordingly, detailed understanding of the system’s switchi...
Autores principales: | , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2015
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4444839/ https://www.ncbi.nlm.nih.gov/pubmed/26014521 http://dx.doi.org/10.1038/srep10485 |
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author | Shin, Y. J. Jeon, B. C. Yang, S. M. Hwang, I. Cho, M. R. Sando, D. Lee, S. R. Yoon, J.-G. Noh, T. W. |
author_facet | Shin, Y. J. Jeon, B. C. Yang, S. M. Hwang, I. Cho, M. R. Sando, D. Lee, S. R. Yoon, J.-G. Noh, T. W. |
author_sort | Shin, Y. J. |
collection | PubMed |
description | Switching dynamics of ferroelectric materials are governed by the response of domain walls to applied electric field. In epitaxial ferroelectric films, thermally-activated ‘creep’ motion plays a significant role in domain wall dynamics, and accordingly, detailed understanding of the system’s switching properties requires that this creep motion be taken into account. Despite this importance, few studies have investigated creep motion in ferroelectric films under ac-driven force. Here, we explore ac hysteretic dynamics in epitaxial BiFeO(3) thin films, through ferroelectric hysteresis measurements, and stroboscopic piezoresponse force microscopy. We reveal that identically-fabricated BiFeO(3) films on SrRuO(3) or La(0.67)Sr(0.33)MnO(3) bottom electrodes exhibit markedly different switching behaviour, with BiFeO(3)/SrRuO(3) presenting essentially creep-free dynamics. This unprecedented result arises from the distinctive spatial inhomogeneities of the internal fields, these being influenced by the bottom electrode’s surface morphology. Our findings further highlight the importance of controlling interface and defect characteristics, to engineer ferroelectric devices with optimised performance. |
format | Online Article Text |
id | pubmed-4444839 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2015 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-44448392015-06-01 Suppression of creep-regime dynamics in epitaxial ferroelectric BiFeO(3) films Shin, Y. J. Jeon, B. C. Yang, S. M. Hwang, I. Cho, M. R. Sando, D. Lee, S. R. Yoon, J.-G. Noh, T. W. Sci Rep Article Switching dynamics of ferroelectric materials are governed by the response of domain walls to applied electric field. In epitaxial ferroelectric films, thermally-activated ‘creep’ motion plays a significant role in domain wall dynamics, and accordingly, detailed understanding of the system’s switching properties requires that this creep motion be taken into account. Despite this importance, few studies have investigated creep motion in ferroelectric films under ac-driven force. Here, we explore ac hysteretic dynamics in epitaxial BiFeO(3) thin films, through ferroelectric hysteresis measurements, and stroboscopic piezoresponse force microscopy. We reveal that identically-fabricated BiFeO(3) films on SrRuO(3) or La(0.67)Sr(0.33)MnO(3) bottom electrodes exhibit markedly different switching behaviour, with BiFeO(3)/SrRuO(3) presenting essentially creep-free dynamics. This unprecedented result arises from the distinctive spatial inhomogeneities of the internal fields, these being influenced by the bottom electrode’s surface morphology. Our findings further highlight the importance of controlling interface and defect characteristics, to engineer ferroelectric devices with optimised performance. Nature Publishing Group 2015-05-27 /pmc/articles/PMC4444839/ /pubmed/26014521 http://dx.doi.org/10.1038/srep10485 Text en Copyright © 2015, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
spellingShingle | Article Shin, Y. J. Jeon, B. C. Yang, S. M. Hwang, I. Cho, M. R. Sando, D. Lee, S. R. Yoon, J.-G. Noh, T. W. Suppression of creep-regime dynamics in epitaxial ferroelectric BiFeO(3) films |
title | Suppression of creep-regime dynamics in epitaxial ferroelectric BiFeO(3) films |
title_full | Suppression of creep-regime dynamics in epitaxial ferroelectric BiFeO(3) films |
title_fullStr | Suppression of creep-regime dynamics in epitaxial ferroelectric BiFeO(3) films |
title_full_unstemmed | Suppression of creep-regime dynamics in epitaxial ferroelectric BiFeO(3) films |
title_short | Suppression of creep-regime dynamics in epitaxial ferroelectric BiFeO(3) films |
title_sort | suppression of creep-regime dynamics in epitaxial ferroelectric bifeo(3) films |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4444839/ https://www.ncbi.nlm.nih.gov/pubmed/26014521 http://dx.doi.org/10.1038/srep10485 |
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