Deep ultraviolet laser direct write for patterning sol-gel InGaZnO semiconducting micro/nanowires and improving field-effect mobility

Deep-UV (DUV) laser was used to directly write indium-gallium-zinc-oxide (IGZO) precursor solution and form micro and nanoscale patterns. The directional DUV laser beam avoids the substrate heating and suppresses the diffraction effect. A IGZO precursor solution was also developed to fulfill the req...

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Detalles Bibliográficos
Autores principales: Lin, Hung-Cheng, Stehlin, Fabrice, Soppera, Olivier, Zan, Hsiao-Wen, Li, Chang-Hung, Wieder, Fernand, Ponche, Arnaud, Berling, Dominique, Yeh, Bo-Hung, Wang, Kuan-Hsun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4444848/
https://www.ncbi.nlm.nih.gov/pubmed/26014902
http://dx.doi.org/10.1038/srep10490

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4444848/
https://www.ncbi.nlm.nih.gov/pubmed/26014902
http://dx.doi.org/10.1038/srep10490

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