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Multiple MoS(2) Transistors for Sensing Molecule Interaction Kinetics
Atomically layered transition metal dichalcogenides (TMDCs) exhibit a significant potential to enable next-generation low-cost transistor biosensors that permit single-molecule-level quantification of biomolecules. To realize such potential biosensing capability, device-oriented research is needed f...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2015
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4444958/ https://www.ncbi.nlm.nih.gov/pubmed/26014289 http://dx.doi.org/10.1038/srep10546 |
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author | Nam, Hongsuk Oh, Bo-Ram Chen, Pengyu Chen, Mikai Wi, Sungjin Wan, Wenjie Kurabayashi, Katsuo Liang, Xiaogan |
author_facet | Nam, Hongsuk Oh, Bo-Ram Chen, Pengyu Chen, Mikai Wi, Sungjin Wan, Wenjie Kurabayashi, Katsuo Liang, Xiaogan |
author_sort | Nam, Hongsuk |
collection | PubMed |
description | Atomically layered transition metal dichalcogenides (TMDCs) exhibit a significant potential to enable next-generation low-cost transistor biosensors that permit single-molecule-level quantification of biomolecules. To realize such potential biosensing capability, device-oriented research is needed for calibrating the sensor responses to enable the quantification of the affinities/kinetics of biomolecule interactions. In this work, we demonstrated MoS(2)-based transistor biosensors capable of detecting tumor necrosis factor – alpha (TNF-α) with a detection limit as low as 60 fM. Such a detection limit was achieved in both linear and subthreshold regimes of MoS(2) transistors. In both regimes, all sets of transistors exhibited consistent calibrated responses with respect to TNF-α concentration, and they resulted in a standard curve, from which the equilibrium constant of the antibody-(TNF-α) pair was extracted to be K(D) = 369 ± 48 fM. Based on this calibrated sensor model, the time-dependent binding kinetics was also measured and the association/dissociation rates of the antibody-(TNF-α) pair were extracted to be (5.03 ± 0.16) × 10(8) M(−1)s(−1) and (1.97 ± 0.08) × 10(−4) s(−1), respectively. This work advanced the critical device physics for leveraging the excellent electronic/structural properties of TMDCs in biosensing applications as well as the research capability in analyzing the biomolecule interactions with fM-level sensitivities. |
format | Online Article Text |
id | pubmed-4444958 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2015 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-44449582015-06-01 Multiple MoS(2) Transistors for Sensing Molecule Interaction Kinetics Nam, Hongsuk Oh, Bo-Ram Chen, Pengyu Chen, Mikai Wi, Sungjin Wan, Wenjie Kurabayashi, Katsuo Liang, Xiaogan Sci Rep Article Atomically layered transition metal dichalcogenides (TMDCs) exhibit a significant potential to enable next-generation low-cost transistor biosensors that permit single-molecule-level quantification of biomolecules. To realize such potential biosensing capability, device-oriented research is needed for calibrating the sensor responses to enable the quantification of the affinities/kinetics of biomolecule interactions. In this work, we demonstrated MoS(2)-based transistor biosensors capable of detecting tumor necrosis factor – alpha (TNF-α) with a detection limit as low as 60 fM. Such a detection limit was achieved in both linear and subthreshold regimes of MoS(2) transistors. In both regimes, all sets of transistors exhibited consistent calibrated responses with respect to TNF-α concentration, and they resulted in a standard curve, from which the equilibrium constant of the antibody-(TNF-α) pair was extracted to be K(D) = 369 ± 48 fM. Based on this calibrated sensor model, the time-dependent binding kinetics was also measured and the association/dissociation rates of the antibody-(TNF-α) pair were extracted to be (5.03 ± 0.16) × 10(8) M(−1)s(−1) and (1.97 ± 0.08) × 10(−4) s(−1), respectively. This work advanced the critical device physics for leveraging the excellent electronic/structural properties of TMDCs in biosensing applications as well as the research capability in analyzing the biomolecule interactions with fM-level sensitivities. Nature Publishing Group 2015-05-27 /pmc/articles/PMC4444958/ /pubmed/26014289 http://dx.doi.org/10.1038/srep10546 Text en Copyright © 2015, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
spellingShingle | Article Nam, Hongsuk Oh, Bo-Ram Chen, Pengyu Chen, Mikai Wi, Sungjin Wan, Wenjie Kurabayashi, Katsuo Liang, Xiaogan Multiple MoS(2) Transistors for Sensing Molecule Interaction Kinetics |
title | Multiple MoS(2) Transistors for Sensing Molecule Interaction Kinetics |
title_full | Multiple MoS(2) Transistors for Sensing Molecule Interaction Kinetics |
title_fullStr | Multiple MoS(2) Transistors for Sensing Molecule Interaction Kinetics |
title_full_unstemmed | Multiple MoS(2) Transistors for Sensing Molecule Interaction Kinetics |
title_short | Multiple MoS(2) Transistors for Sensing Molecule Interaction Kinetics |
title_sort | multiple mos(2) transistors for sensing molecule interaction kinetics |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4444958/ https://www.ncbi.nlm.nih.gov/pubmed/26014289 http://dx.doi.org/10.1038/srep10546 |
work_keys_str_mv | AT namhongsuk multiplemos2transistorsforsensingmoleculeinteractionkinetics AT ohboram multiplemos2transistorsforsensingmoleculeinteractionkinetics AT chenpengyu multiplemos2transistorsforsensingmoleculeinteractionkinetics AT chenmikai multiplemos2transistorsforsensingmoleculeinteractionkinetics AT wisungjin multiplemos2transistorsforsensingmoleculeinteractionkinetics AT wanwenjie multiplemos2transistorsforsensingmoleculeinteractionkinetics AT kurabayashikatsuo multiplemos2transistorsforsensingmoleculeinteractionkinetics AT liangxiaogan multiplemos2transistorsforsensingmoleculeinteractionkinetics |