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Multiple MoS(2) Transistors for Sensing Molecule Interaction Kinetics

Atomically layered transition metal dichalcogenides (TMDCs) exhibit a significant potential to enable next-generation low-cost transistor biosensors that permit single-molecule-level quantification of biomolecules. To realize such potential biosensing capability, device-oriented research is needed f...

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Autores principales: Nam, Hongsuk, Oh, Bo-Ram, Chen, Pengyu, Chen, Mikai, Wi, Sungjin, Wan, Wenjie, Kurabayashi, Katsuo, Liang, Xiaogan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4444958/
https://www.ncbi.nlm.nih.gov/pubmed/26014289
http://dx.doi.org/10.1038/srep10546
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author Nam, Hongsuk
Oh, Bo-Ram
Chen, Pengyu
Chen, Mikai
Wi, Sungjin
Wan, Wenjie
Kurabayashi, Katsuo
Liang, Xiaogan
author_facet Nam, Hongsuk
Oh, Bo-Ram
Chen, Pengyu
Chen, Mikai
Wi, Sungjin
Wan, Wenjie
Kurabayashi, Katsuo
Liang, Xiaogan
author_sort Nam, Hongsuk
collection PubMed
description Atomically layered transition metal dichalcogenides (TMDCs) exhibit a significant potential to enable next-generation low-cost transistor biosensors that permit single-molecule-level quantification of biomolecules. To realize such potential biosensing capability, device-oriented research is needed for calibrating the sensor responses to enable the quantification of the affinities/kinetics of biomolecule interactions. In this work, we demonstrated MoS(2)-based transistor biosensors capable of detecting tumor necrosis factor – alpha (TNF-α) with a detection limit as low as 60 fM. Such a detection limit was achieved in both linear and subthreshold regimes of MoS(2) transistors. In both regimes, all sets of transistors exhibited consistent calibrated responses with respect to TNF-α concentration, and they resulted in a standard curve, from which the equilibrium constant of the antibody-(TNF-α) pair was extracted to be K(D) = 369 ± 48 fM. Based on this calibrated sensor model, the time-dependent binding kinetics was also measured and the association/dissociation rates of the antibody-(TNF-α) pair were extracted to be (5.03 ± 0.16) × 10(8) M(−1)s(−1) and (1.97 ± 0.08) × 10(−4) s(−1), respectively. This work advanced the critical device physics for leveraging the excellent electronic/structural properties of TMDCs in biosensing applications as well as the research capability in analyzing the biomolecule interactions with fM-level sensitivities.
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spelling pubmed-44449582015-06-01 Multiple MoS(2) Transistors for Sensing Molecule Interaction Kinetics Nam, Hongsuk Oh, Bo-Ram Chen, Pengyu Chen, Mikai Wi, Sungjin Wan, Wenjie Kurabayashi, Katsuo Liang, Xiaogan Sci Rep Article Atomically layered transition metal dichalcogenides (TMDCs) exhibit a significant potential to enable next-generation low-cost transistor biosensors that permit single-molecule-level quantification of biomolecules. To realize such potential biosensing capability, device-oriented research is needed for calibrating the sensor responses to enable the quantification of the affinities/kinetics of biomolecule interactions. In this work, we demonstrated MoS(2)-based transistor biosensors capable of detecting tumor necrosis factor – alpha (TNF-α) with a detection limit as low as 60 fM. Such a detection limit was achieved in both linear and subthreshold regimes of MoS(2) transistors. In both regimes, all sets of transistors exhibited consistent calibrated responses with respect to TNF-α concentration, and they resulted in a standard curve, from which the equilibrium constant of the antibody-(TNF-α) pair was extracted to be K(D) = 369 ± 48 fM. Based on this calibrated sensor model, the time-dependent binding kinetics was also measured and the association/dissociation rates of the antibody-(TNF-α) pair were extracted to be (5.03 ± 0.16) × 10(8) M(−1)s(−1) and (1.97 ± 0.08) × 10(−4) s(−1), respectively. This work advanced the critical device physics for leveraging the excellent electronic/structural properties of TMDCs in biosensing applications as well as the research capability in analyzing the biomolecule interactions with fM-level sensitivities. Nature Publishing Group 2015-05-27 /pmc/articles/PMC4444958/ /pubmed/26014289 http://dx.doi.org/10.1038/srep10546 Text en Copyright © 2015, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Nam, Hongsuk
Oh, Bo-Ram
Chen, Pengyu
Chen, Mikai
Wi, Sungjin
Wan, Wenjie
Kurabayashi, Katsuo
Liang, Xiaogan
Multiple MoS(2) Transistors for Sensing Molecule Interaction Kinetics
title Multiple MoS(2) Transistors for Sensing Molecule Interaction Kinetics
title_full Multiple MoS(2) Transistors for Sensing Molecule Interaction Kinetics
title_fullStr Multiple MoS(2) Transistors for Sensing Molecule Interaction Kinetics
title_full_unstemmed Multiple MoS(2) Transistors for Sensing Molecule Interaction Kinetics
title_short Multiple MoS(2) Transistors for Sensing Molecule Interaction Kinetics
title_sort multiple mos(2) transistors for sensing molecule interaction kinetics
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4444958/
https://www.ncbi.nlm.nih.gov/pubmed/26014289
http://dx.doi.org/10.1038/srep10546
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