Cargando…

Strain Engineering of Octahedral Rotations and Physical Properties of SrRuO(3) Films

Strain engineering is an effective way to modify functional properties of thin films. Recently, the importance of octahedral rotations in pervoskite films has been recognized in discovering and designing new functional phases. Octahedral behavior of SrRuO(3) film as a popular electrode in heterostru...

Descripción completa

Detalles Bibliográficos
Autores principales: Lu, Wenlai, Song, Wendong, Yang, Ping, Ding, Jun, Chow, Gan Moog, Chen, Jingsheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4446894/
https://www.ncbi.nlm.nih.gov/pubmed/26018639
http://dx.doi.org/10.1038/srep10245
Descripción
Sumario:Strain engineering is an effective way to modify functional properties of thin films. Recently, the importance of octahedral rotations in pervoskite films has been recognized in discovering and designing new functional phases. Octahedral behavior of SrRuO(3) film as a popular electrode in heterostructured devices is of particular interest for its probable interfacial coupling of octahedra with the functional overlayers. Here we report the strain engineering of octahedral rotations and physical properties that has been achieved in SrRuO(3) films in response to the substrate-induced misfit strains of almost the same amplitude but of opposite signs. It shows that the compressively strained film on NdGaO(3) substrate displays a rotation pattern of a tetragonal phase whilst the tensilely strained film on KTaO(3) substrate has the rotation pattern of the bulk orthorhombic SrRuO(3) phase. In addition, the compressively strained film displays a perpendicular magnetic anisotropy while the tensilely strained film has the magnetic easy axis lying in the film plane. The results show the prospect of strain engineered octahedral architecture in producing desired property and novel functionality in the class of perovskite material.