Cargando…
Structural investigations of the α(12) Si–Ge superstructure
This article reports the X-ray diffraction-based structural characterization of the α(12) multilayer structure SiGe(2)Si(2)Ge(2)SiGe(12) [d’Avezac, Luo, Chanier & Zunger (2012 ▶). Phys. Rev. Lett. 108, 027401], which is predicted to form a direct bandgap material. In particular, structural param...
Autores principales: | Etzelstorfer, Tanja, Ahmadpor Monazam, Mohammad Reza, Cecchi, Stefano, Kriegner, Dominik, Chrastina, Daniel, Gatti, Eleonora, Grilli, Emanuele, Rosemann, Nils, Chatterjee, Sangam, Holý, Vaclav, Pezzoli, Fabio, Isella, Giovanni, Stangl, Julian |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
International Union of Crystallography
2015
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4453172/ https://www.ncbi.nlm.nih.gov/pubmed/26089750 http://dx.doi.org/10.1107/S1600576715000849 |
Ejemplares similares
-
Scanning X-ray strain microscopy of inhomogeneously strained Ge micro-bridges
por: Etzelstorfer, Tanja, et al.
Publicado: (2014) -
X-ray Nanodiffraction on a Single SiGe Quantum Dot inside a Functioning Field-Effect Transistor
por: Hrauda, Nina, et al.
Publicado: (2011) -
Composition profiling of inhomogeneous SiGe nanostructures by Raman spectroscopy
por: Picco, Andrea, et al.
Publicado: (2012) -
Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells
por: Giorgioni, Anna, et al.
Publicado: (2016) -
Giant electro-optic effect in Ge/SiGe coupled quantum wells
por: Frigerio, Jacopo, et al.
Publicado: (2015)