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Tailoring resistive switching in Pt/SrTiO(3) junctions by stoichiometry control
Resistive switching effects in transition metal oxide-based devices offer new opportunities for information storage and computing technologies. Although it is known that resistive switching is a defect-driven phenomenon, the precise mechanisms are still poorly understood owing to the difficulty of s...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2015
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4460896/ https://www.ncbi.nlm.nih.gov/pubmed/26056783 http://dx.doi.org/10.1038/srep11079 |