Cargando…
Change of Electronic Structures by Dopant-Induced Local Strain
Ag-induced Si(111)-[Image: see text] surfaces ([Image: see text]-Ag) exhibit unusual electronic structures that cannot be explained by the conventional rigid band model and charge transfer model. The ([Image: see text]-Ag surfaces feature a free-electron-like parabolic band, the S(1) band, that sele...
Autores principales: | Hyeong Kim, Gyu, Jeong, Sukmin |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2015
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4462144/ https://www.ncbi.nlm.nih.gov/pubmed/26061821 http://dx.doi.org/10.1038/srep11227 |
Ejemplares similares
-
The electronic structure of amphoteric Sn dopants in III-V compound semiconductors
por: Weyer, G, et al.
Publicado: (1983) -
Electron-Beam Manipulation of Silicon Dopants in Graphene
por: Tripathi, Mukesh, et al.
Publicado: (2018) -
Structural Effects of Lanthanide Dopants on Alumina
por: Patel, Ketan, et al.
Publicado: (2017) -
Electronic structure, lattice location and stability of dopants in wide band gap semiconductors
por: Baptista Barbosa, Marcelo
Publicado: (2021) -
Grain boundary structural transformation induced by co-segregation of aliovalent dopants
por: Futazuka, Toshihiro, et al.
Publicado: (2022)