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Scanning Tunneling Spectroscopy on InAs–GaSb Esaki Diode Nanowire Devices during Operation

[Image: see text] Using a scanning tunneling and atomic force microscope combined with in-vacuum atomic hydrogen cleaning we demonstrate stable scanning tunneling spectroscopy (STS) with nanoscale resolution on electrically active nanowire devices in the common lateral configuration. We use this met...

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Autores principales: Persson, Olof, Webb, James L., Dick, Kimberly A., Thelander, Claes, Mikkelsen, Anders, Timm, Rainer
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2015
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4463546/
https://www.ncbi.nlm.nih.gov/pubmed/25927249
http://dx.doi.org/10.1021/acs.nanolett.5b00898
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author Persson, Olof
Webb, James L.
Dick, Kimberly A.
Thelander, Claes
Mikkelsen, Anders
Timm, Rainer
author_facet Persson, Olof
Webb, James L.
Dick, Kimberly A.
Thelander, Claes
Mikkelsen, Anders
Timm, Rainer
author_sort Persson, Olof
collection PubMed
description [Image: see text] Using a scanning tunneling and atomic force microscope combined with in-vacuum atomic hydrogen cleaning we demonstrate stable scanning tunneling spectroscopy (STS) with nanoscale resolution on electrically active nanowire devices in the common lateral configuration. We use this method to map out the surface density of states on both the GaSb and InAs segments of GaSb–InAs Esaki diodes as well as the transition region between the two segments. Generally the surface shows small bandgaps centered around the Fermi level, which is attributed to a thin multielement surface layer, except in the diode transition region where we observe a sudden broadening of the bandgap. By applying a bias to the nanowire we find that the STS spectra shift according to the local nanoscale potential drop inside the wire. Importantly, this shows that we have a nanoscale probe with which we can infer both surface electronic structure and the local potential inside the nanowire and we can connect this information directly to the performance of the imaged device.
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spelling pubmed-44635462015-06-14 Scanning Tunneling Spectroscopy on InAs–GaSb Esaki Diode Nanowire Devices during Operation Persson, Olof Webb, James L. Dick, Kimberly A. Thelander, Claes Mikkelsen, Anders Timm, Rainer Nano Lett [Image: see text] Using a scanning tunneling and atomic force microscope combined with in-vacuum atomic hydrogen cleaning we demonstrate stable scanning tunneling spectroscopy (STS) with nanoscale resolution on electrically active nanowire devices in the common lateral configuration. We use this method to map out the surface density of states on both the GaSb and InAs segments of GaSb–InAs Esaki diodes as well as the transition region between the two segments. Generally the surface shows small bandgaps centered around the Fermi level, which is attributed to a thin multielement surface layer, except in the diode transition region where we observe a sudden broadening of the bandgap. By applying a bias to the nanowire we find that the STS spectra shift according to the local nanoscale potential drop inside the wire. Importantly, this shows that we have a nanoscale probe with which we can infer both surface electronic structure and the local potential inside the nanowire and we can connect this information directly to the performance of the imaged device. American Chemical Society 2015-04-30 2015-06-10 /pmc/articles/PMC4463546/ /pubmed/25927249 http://dx.doi.org/10.1021/acs.nanolett.5b00898 Text en Copyright © 2015 American Chemical Society This is an open access article published under a Creative Commons Attribution (CC-BY) License (http://pubs.acs.org/page/policy/authorchoice_ccby_termsofuse.html) , which permits unrestricted use, distribution and reproduction in any medium, provided the author and source are cited.
spellingShingle Persson, Olof
Webb, James L.
Dick, Kimberly A.
Thelander, Claes
Mikkelsen, Anders
Timm, Rainer
Scanning Tunneling Spectroscopy on InAs–GaSb Esaki Diode Nanowire Devices during Operation
title Scanning Tunneling Spectroscopy on InAs–GaSb Esaki Diode Nanowire Devices during Operation
title_full Scanning Tunneling Spectroscopy on InAs–GaSb Esaki Diode Nanowire Devices during Operation
title_fullStr Scanning Tunneling Spectroscopy on InAs–GaSb Esaki Diode Nanowire Devices during Operation
title_full_unstemmed Scanning Tunneling Spectroscopy on InAs–GaSb Esaki Diode Nanowire Devices during Operation
title_short Scanning Tunneling Spectroscopy on InAs–GaSb Esaki Diode Nanowire Devices during Operation
title_sort scanning tunneling spectroscopy on inas–gasb esaki diode nanowire devices during operation
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4463546/
https://www.ncbi.nlm.nih.gov/pubmed/25927249
http://dx.doi.org/10.1021/acs.nanolett.5b00898
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