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Schottky barrier formation and band bending revealed by first- principles calculations

The formation of a Schottky barrier at the metal-semiconductor interface is widely utilised in semiconductor devices. With the emerging of novel Schottky barrier based nanoelectronics, a further microscopic understanding of this interface is in high demand. Here we provide an atomistic insight into...

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Detalles Bibliográficos
Autores principales:	Jiao, Yang, Hellman, Anders, Fang, Yurui, Gao, Shiwu, Käll, Mikael
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group 2015
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4464327/ https://www.ncbi.nlm.nih.gov/pubmed/26065401 http://dx.doi.org/10.1038/srep11374

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