Characterization and Effect of Thermal Annealing on InAs Quantum Dots Grown by Droplet Epitaxy on GaAs(111)A Substrates

We report the study on formation and thermal annealing of InAs quantum dots grown by droplet epitaxy on GaAs (111)A surface. By following the changes in RHEED pattern, we found that InAs quantum dots arsenized at low temperature are lattice matched with GaAs substrate, becoming almost fully relaxed...

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Detalles Bibliográficos
Autores principales: Bietti, Sergio, Esposito, Luca, Fedorov, Alexey, Ballabio, Andrea, Martinelli, Andrea, Sanguinetti, Stefano
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4467813/
https://www.ncbi.nlm.nih.gov/pubmed/26058506
http://dx.doi.org/10.1186/s11671-015-0930-3
Descripción
Sumario:We report the study on formation and thermal annealing of InAs quantum dots grown by droplet epitaxy on GaAs (111)A surface. By following the changes in RHEED pattern, we found that InAs quantum dots arsenized at low temperature are lattice matched with GaAs substrate, becoming almost fully relaxed when substrate temperature is increased. Morphological characterizations performed by atomic force microscopy show that annealing process is able to change density and aspect ratio of InAs quantum dots and also to narrow size distribution.

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