Characterization and Effect of Thermal Annealing on InAs Quantum Dots Grown by Droplet Epitaxy on GaAs(111)A Substrates

We report the study on formation and thermal annealing of InAs quantum dots grown by droplet epitaxy on GaAs (111)A surface. By following the changes in RHEED pattern, we found that InAs quantum dots arsenized at low temperature are lattice matched with GaAs substrate, becoming almost fully relaxed...

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Detalles Bibliográficos
Autores principales: Bietti, Sergio, Esposito, Luca, Fedorov, Alexey, Ballabio, Andrea, Martinelli, Andrea, Sanguinetti, Stefano
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4467813/
https://www.ncbi.nlm.nih.gov/pubmed/26058506
http://dx.doi.org/10.1186/s11671-015-0930-3
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author Bietti, Sergio
Esposito, Luca
Fedorov, Alexey
Ballabio, Andrea
Martinelli, Andrea
Sanguinetti, Stefano
author_facet Bietti, Sergio
Esposito, Luca
Fedorov, Alexey
Ballabio, Andrea
Martinelli, Andrea
Sanguinetti, Stefano
author_sort Bietti, Sergio
collection PubMed
description We report the study on formation and thermal annealing of InAs quantum dots grown by droplet epitaxy on GaAs (111)A surface. By following the changes in RHEED pattern, we found that InAs quantum dots arsenized at low temperature are lattice matched with GaAs substrate, becoming almost fully relaxed when substrate temperature is increased. Morphological characterizations performed by atomic force microscopy show that annealing process is able to change density and aspect ratio of InAs quantum dots and also to narrow size distribution.
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spelling pubmed-44678132015-06-18 Characterization and Effect of Thermal Annealing on InAs Quantum Dots Grown by Droplet Epitaxy on GaAs(111)A Substrates Bietti, Sergio Esposito, Luca Fedorov, Alexey Ballabio, Andrea Martinelli, Andrea Sanguinetti, Stefano Nanoscale Res Lett Nano Express We report the study on formation and thermal annealing of InAs quantum dots grown by droplet epitaxy on GaAs (111)A surface. By following the changes in RHEED pattern, we found that InAs quantum dots arsenized at low temperature are lattice matched with GaAs substrate, becoming almost fully relaxed when substrate temperature is increased. Morphological characterizations performed by atomic force microscopy show that annealing process is able to change density and aspect ratio of InAs quantum dots and also to narrow size distribution. Springer US 2015-06-02 /pmc/articles/PMC4467813/ /pubmed/26058506 http://dx.doi.org/10.1186/s11671-015-0930-3 Text en © Bietti et al. 2015 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Bietti, Sergio
Esposito, Luca
Fedorov, Alexey
Ballabio, Andrea
Martinelli, Andrea
Sanguinetti, Stefano
Characterization and Effect of Thermal Annealing on InAs Quantum Dots Grown by Droplet Epitaxy on GaAs(111)A Substrates
title Characterization and Effect of Thermal Annealing on InAs Quantum Dots Grown by Droplet Epitaxy on GaAs(111)A Substrates
title_full Characterization and Effect of Thermal Annealing on InAs Quantum Dots Grown by Droplet Epitaxy on GaAs(111)A Substrates
title_fullStr Characterization and Effect of Thermal Annealing on InAs Quantum Dots Grown by Droplet Epitaxy on GaAs(111)A Substrates
title_full_unstemmed Characterization and Effect of Thermal Annealing on InAs Quantum Dots Grown by Droplet Epitaxy on GaAs(111)A Substrates
title_short Characterization and Effect of Thermal Annealing on InAs Quantum Dots Grown by Droplet Epitaxy on GaAs(111)A Substrates
title_sort characterization and effect of thermal annealing on inas quantum dots grown by droplet epitaxy on gaas(111)a substrates
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4467813/
https://www.ncbi.nlm.nih.gov/pubmed/26058506
http://dx.doi.org/10.1186/s11671-015-0930-3
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