Cargando…

Magnetic skyrmion transistor: skyrmion motion in a voltage-gated nanotrack

Magnetic skyrmions are localized and topologically protected spin configurations, which are of both fundamental and applied interests for future electronics. In this work, we propose a voltage-gated skyrmion transistor within the well-established framework of micromagnetics. Its operating conditions...

Descripción completa

Detalles Bibliográficos
Autores principales: Zhang, Xichao, Zhou, Yan, Ezawa, Motohiko, Zhao, G. P., Zhao, Weisheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4471904/
https://www.ncbi.nlm.nih.gov/pubmed/26087287
http://dx.doi.org/10.1038/srep11369
_version_ 1782376980597964800
author Zhang, Xichao
Zhou, Yan
Ezawa, Motohiko
Zhao, G. P.
Zhao, Weisheng
author_facet Zhang, Xichao
Zhou, Yan
Ezawa, Motohiko
Zhao, G. P.
Zhao, Weisheng
author_sort Zhang, Xichao
collection PubMed
description Magnetic skyrmions are localized and topologically protected spin configurations, which are of both fundamental and applied interests for future electronics. In this work, we propose a voltage-gated skyrmion transistor within the well-established framework of micromagnetics. Its operating conditions and processes have been theoretically investigated and demonstrated, in which the gate voltage can be used to switch on/off a circuit. Our results provide the first time guidelines for practical realization of hybrid skyrmionic-electronic devices.
format Online
Article
Text
id pubmed-4471904
institution National Center for Biotechnology Information
language English
publishDate 2015
publisher Nature Publishing Group
record_format MEDLINE/PubMed
spelling pubmed-44719042015-06-29 Magnetic skyrmion transistor: skyrmion motion in a voltage-gated nanotrack Zhang, Xichao Zhou, Yan Ezawa, Motohiko Zhao, G. P. Zhao, Weisheng Sci Rep Article Magnetic skyrmions are localized and topologically protected spin configurations, which are of both fundamental and applied interests for future electronics. In this work, we propose a voltage-gated skyrmion transistor within the well-established framework of micromagnetics. Its operating conditions and processes have been theoretically investigated and demonstrated, in which the gate voltage can be used to switch on/off a circuit. Our results provide the first time guidelines for practical realization of hybrid skyrmionic-electronic devices. Nature Publishing Group 2015-06-18 /pmc/articles/PMC4471904/ /pubmed/26087287 http://dx.doi.org/10.1038/srep11369 Text en Copyright © 2015, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Zhang, Xichao
Zhou, Yan
Ezawa, Motohiko
Zhao, G. P.
Zhao, Weisheng
Magnetic skyrmion transistor: skyrmion motion in a voltage-gated nanotrack
title Magnetic skyrmion transistor: skyrmion motion in a voltage-gated nanotrack
title_full Magnetic skyrmion transistor: skyrmion motion in a voltage-gated nanotrack
title_fullStr Magnetic skyrmion transistor: skyrmion motion in a voltage-gated nanotrack
title_full_unstemmed Magnetic skyrmion transistor: skyrmion motion in a voltage-gated nanotrack
title_short Magnetic skyrmion transistor: skyrmion motion in a voltage-gated nanotrack
title_sort magnetic skyrmion transistor: skyrmion motion in a voltage-gated nanotrack
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4471904/
https://www.ncbi.nlm.nih.gov/pubmed/26087287
http://dx.doi.org/10.1038/srep11369
work_keys_str_mv AT zhangxichao magneticskyrmiontransistorskyrmionmotioninavoltagegatednanotrack
AT zhouyan magneticskyrmiontransistorskyrmionmotioninavoltagegatednanotrack
AT ezawamotohiko magneticskyrmiontransistorskyrmionmotioninavoltagegatednanotrack
AT zhaogp magneticskyrmiontransistorskyrmionmotioninavoltagegatednanotrack
AT zhaoweisheng magneticskyrmiontransistorskyrmionmotioninavoltagegatednanotrack