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Magnetic skyrmion transistor: skyrmion motion in a voltage-gated nanotrack
Magnetic skyrmions are localized and topologically protected spin configurations, which are of both fundamental and applied interests for future electronics. In this work, we propose a voltage-gated skyrmion transistor within the well-established framework of micromagnetics. Its operating conditions...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2015
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4471904/ https://www.ncbi.nlm.nih.gov/pubmed/26087287 http://dx.doi.org/10.1038/srep11369 |
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author | Zhang, Xichao Zhou, Yan Ezawa, Motohiko Zhao, G. P. Zhao, Weisheng |
author_facet | Zhang, Xichao Zhou, Yan Ezawa, Motohiko Zhao, G. P. Zhao, Weisheng |
author_sort | Zhang, Xichao |
collection | PubMed |
description | Magnetic skyrmions are localized and topologically protected spin configurations, which are of both fundamental and applied interests for future electronics. In this work, we propose a voltage-gated skyrmion transistor within the well-established framework of micromagnetics. Its operating conditions and processes have been theoretically investigated and demonstrated, in which the gate voltage can be used to switch on/off a circuit. Our results provide the first time guidelines for practical realization of hybrid skyrmionic-electronic devices. |
format | Online Article Text |
id | pubmed-4471904 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2015 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-44719042015-06-29 Magnetic skyrmion transistor: skyrmion motion in a voltage-gated nanotrack Zhang, Xichao Zhou, Yan Ezawa, Motohiko Zhao, G. P. Zhao, Weisheng Sci Rep Article Magnetic skyrmions are localized and topologically protected spin configurations, which are of both fundamental and applied interests for future electronics. In this work, we propose a voltage-gated skyrmion transistor within the well-established framework of micromagnetics. Its operating conditions and processes have been theoretically investigated and demonstrated, in which the gate voltage can be used to switch on/off a circuit. Our results provide the first time guidelines for practical realization of hybrid skyrmionic-electronic devices. Nature Publishing Group 2015-06-18 /pmc/articles/PMC4471904/ /pubmed/26087287 http://dx.doi.org/10.1038/srep11369 Text en Copyright © 2015, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
spellingShingle | Article Zhang, Xichao Zhou, Yan Ezawa, Motohiko Zhao, G. P. Zhao, Weisheng Magnetic skyrmion transistor: skyrmion motion in a voltage-gated nanotrack |
title | Magnetic skyrmion transistor: skyrmion motion in a voltage-gated nanotrack |
title_full | Magnetic skyrmion transistor: skyrmion motion in a voltage-gated nanotrack |
title_fullStr | Magnetic skyrmion transistor: skyrmion motion in a voltage-gated nanotrack |
title_full_unstemmed | Magnetic skyrmion transistor: skyrmion motion in a voltage-gated nanotrack |
title_short | Magnetic skyrmion transistor: skyrmion motion in a voltage-gated nanotrack |
title_sort | magnetic skyrmion transistor: skyrmion motion in a voltage-gated nanotrack |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4471904/ https://www.ncbi.nlm.nih.gov/pubmed/26087287 http://dx.doi.org/10.1038/srep11369 |
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