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Tailoring low-dimensional structures of bismuth on monolayer epitaxial graphene
To improve graphene-based multifunctional devices at nanoscale, a stepwise and controllable fabrication procedure must be elucidated. Here, a series of structural transition of bismuth (Bi) adatoms, adsorbed on monolayer epitaxial graphene (MEG), is explored at room temperature. Bi adatoms undergo a...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2015
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4477326/ https://www.ncbi.nlm.nih.gov/pubmed/26100604 http://dx.doi.org/10.1038/srep11623 |
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author | Chen, H.-H. Su, S. H. Chang, S.-L. Cheng, B.-Y. Chen, S. W. Chen, H.-Y. Lin, M.-F. Huang, J. C. A. |
author_facet | Chen, H.-H. Su, S. H. Chang, S.-L. Cheng, B.-Y. Chen, S. W. Chen, H.-Y. Lin, M.-F. Huang, J. C. A. |
author_sort | Chen, H.-H. |
collection | PubMed |
description | To improve graphene-based multifunctional devices at nanoscale, a stepwise and controllable fabrication procedure must be elucidated. Here, a series of structural transition of bismuth (Bi) adatoms, adsorbed on monolayer epitaxial graphene (MEG), is explored at room temperature. Bi adatoms undergo a structural transition from one-dimensional (1D) linear structures to two-dimensional (2D) triangular islands and such 2D growth mode is affected by the corrugated substrate. Upon Bi deposition, a little charge transfer occurs and a characteristic peak can be observed in the tunneling spectrum, reflecting the distinctive electronic structure of the Bi adatoms. When annealed to ~500 K, 2D triangular Bi islands aggregate into Bi nanoclusters (NCs) of uniform size. A well-controlled fabrication method is thus demonstrated. The approaches adopted herein provide perspectives for fabricating and characterizing periodic networks on MEG and related systems, which are useful in realizing graphene-based electronic, energy, sensor and spintronic devices. |
format | Online Article Text |
id | pubmed-4477326 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2015 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-44773262015-07-13 Tailoring low-dimensional structures of bismuth on monolayer epitaxial graphene Chen, H.-H. Su, S. H. Chang, S.-L. Cheng, B.-Y. Chen, S. W. Chen, H.-Y. Lin, M.-F. Huang, J. C. A. Sci Rep Article To improve graphene-based multifunctional devices at nanoscale, a stepwise and controllable fabrication procedure must be elucidated. Here, a series of structural transition of bismuth (Bi) adatoms, adsorbed on monolayer epitaxial graphene (MEG), is explored at room temperature. Bi adatoms undergo a structural transition from one-dimensional (1D) linear structures to two-dimensional (2D) triangular islands and such 2D growth mode is affected by the corrugated substrate. Upon Bi deposition, a little charge transfer occurs and a characteristic peak can be observed in the tunneling spectrum, reflecting the distinctive electronic structure of the Bi adatoms. When annealed to ~500 K, 2D triangular Bi islands aggregate into Bi nanoclusters (NCs) of uniform size. A well-controlled fabrication method is thus demonstrated. The approaches adopted herein provide perspectives for fabricating and characterizing periodic networks on MEG and related systems, which are useful in realizing graphene-based electronic, energy, sensor and spintronic devices. Nature Publishing Group 2015-06-23 /pmc/articles/PMC4477326/ /pubmed/26100604 http://dx.doi.org/10.1038/srep11623 Text en Copyright © 2015, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
spellingShingle | Article Chen, H.-H. Su, S. H. Chang, S.-L. Cheng, B.-Y. Chen, S. W. Chen, H.-Y. Lin, M.-F. Huang, J. C. A. Tailoring low-dimensional structures of bismuth on monolayer epitaxial graphene |
title | Tailoring low-dimensional structures of bismuth on monolayer epitaxial graphene |
title_full | Tailoring low-dimensional structures of bismuth on monolayer epitaxial graphene |
title_fullStr | Tailoring low-dimensional structures of bismuth on monolayer epitaxial graphene |
title_full_unstemmed | Tailoring low-dimensional structures of bismuth on monolayer epitaxial graphene |
title_short | Tailoring low-dimensional structures of bismuth on monolayer epitaxial graphene |
title_sort | tailoring low-dimensional structures of bismuth on monolayer epitaxial graphene |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4477326/ https://www.ncbi.nlm.nih.gov/pubmed/26100604 http://dx.doi.org/10.1038/srep11623 |
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