Cargando…

Energy landscape scheme for an intuitive understanding of complex domain dynamics in ferroelectric thin films

Fundamental understanding of domain dynamics in ferroic materials has been a longstanding issue because of its relevance to many systems and to the design of nanoscale domain-wall devices. Despite many theoretical and experimental studies, a full understanding of domain dynamics still remains incomp...

Descripción completa

Detalles Bibliográficos
Autores principales: Heon Kim, Tae, Yoon, Jong-Gul, Hyub Baek, Seung, Park, Woong-kyu, Mo Yang, Sang, Yup Jang, Seung, Min, Taeyuun, Chung, Jin-Seok, Eom, Chang-Beom, Won Noh, Tae
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4486935/
https://www.ncbi.nlm.nih.gov/pubmed/26130159
http://dx.doi.org/10.1038/srep11625
Descripción
Sumario:Fundamental understanding of domain dynamics in ferroic materials has been a longstanding issue because of its relevance to many systems and to the design of nanoscale domain-wall devices. Despite many theoretical and experimental studies, a full understanding of domain dynamics still remains incomplete, partly due to complex interactions between domain-walls and disorder. We report domain-shape-preserving deterministic domain-wall motion, which directly confirms microscopic return point memory, by observing domain-wall breathing motion in ferroelectric BiFeO(3) thin film using stroboscopic piezoresponse force microscopy. Spatial energy landscape that provides new insights into domain dynamics is also mapped based on the breathing motion of domain walls. The evolution of complex domain structure can be understood by the process of occupying the lowest available energy states of polarization in the energy landscape which is determined by defect-induced internal fields. Our result highlights a pathway for the novel design of ferroelectric domain-wall devices through the engineering of energy landscape using defect-induced internal fields such as flexoelectric fields.