Magnetic In(x)Ga(1 - x)N nanowires at room temperature using Cu dopant and annealing

Single-crystal, Cu-doped In(x)Ga(1 - x)N nanowires were grown on GaN/Al(2)O(3) substrates via a vapor-liquid-solid (VLS) mechanism using Ni/Au bi-catalysts. The typical diameter of the Cu:In(x)Ga(1 - x)N nanowires was 80 to 150 nm, with a typical length of hundreds of micrometers. The as-grown nanow...

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Detalles Bibliográficos
Autores principales: Park, Youn Ho, Ha, Ryong, Park, Tea-Eon, Kim, Sung Wook, Seo, Dongjea, Choi, Heon-Jin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Commentary
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4493842/
https://www.ncbi.nlm.nih.gov/pubmed/26055472
http://dx.doi.org/10.1186/1556-276X-10-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4493842/
https://www.ncbi.nlm.nih.gov/pubmed/26055472
http://dx.doi.org/10.1186/1556-276X-10-3

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