The effect of free-standing GaN substrate on carrier localization in ultraviolet InGaN light-emitting diodes

In this study, we have grown 380-nm ultraviolet light-emitting diodes (UV-LEDs) based on InGaN/AlInGaN multiple quantum well (MQW) structures on free-standing GaN (FS-GaN) substrate by atmospheric pressure metal-organic chemical vapor deposition (AP-MOCVD), and investigated the relationship between...

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Detalles Bibliográficos
Autores principales: Tsai, Ming-Ta, Chu, Chung-Ming, Huang, Che-Hsuan, Wu, Yin-Hao, Chiu, Ching-Hsueh, Li, Zhen-Yu, Tu, Po-Min, Lee, Wei-I, Kuo, Hao-Chung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4494039/
https://www.ncbi.nlm.nih.gov/pubmed/26088993
http://dx.doi.org/10.1186/1556-276X-9-675

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4494039/
https://www.ncbi.nlm.nih.gov/pubmed/26088993
http://dx.doi.org/10.1186/1556-276X-9-675

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