Functional ferroelectric tunnel junctions on silicon

The quest for solid state non-volatility memory devices on silicon with high storage density, high speed, low power consumption has attracted intense research on new materials and novel device architectures. Although flash memory dominates in the non-volatile memory market currently, it has drawback...

Descripción completa

Detalles Bibliográficos
Autores principales: Guo, Rui, Wang, Zhe, Zeng, Shengwei, Han, Kun, Huang, Lisen, Schlom, Darrell G., Venkatesan, T., Ariando, A, Chen, Jingsheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4517170/
https://www.ncbi.nlm.nih.gov/pubmed/26215429
http://dx.doi.org/10.1038/srep12576

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4517170/
https://www.ncbi.nlm.nih.gov/pubmed/26215429
http://dx.doi.org/10.1038/srep12576

Ejemplares similares