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Modeling of switching mechanism in GeSbTe chalcogenide superlattices
We study the switching process in chalcogenide superlattice (CSL) phase-change memory materials by describing the motion of an atomic layer between the low and high resistance states. Two models have been proposed by different groups based on high-resolution electron microscope images. Model 1 propo...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group
2015
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4518231/ https://www.ncbi.nlm.nih.gov/pubmed/26219904 http://dx.doi.org/10.1038/srep12612 |