Electric field modification of magnetism in Au/La(2/3)Ba(1/3)MnO(3)/Pt device

The La(2/3)Ba(1/3)MnO(3) film is deposited in a CMOS-compatible Pt/Ti/SiO(2)/Si substrate with the oxygen pressure of 10 Pa for investigating magnetoelectric effect. Bipolar resistive switching effect with excellent endurance and retention is observed in this Au/La(2/3)Ba(1/3)MnO(3)/Pt device. Through this effect, a significant nonvolatile change of magnetization is obtained in this device as well. The change of magnetization can be understood by the break and repair of the -Mn(3+)-O(2−)-Mn(4+)- chains induced by the electric field through the oxygen vacancies migration. The resistance and magnetization of the Au/La(2/3)Ba(1/3)MnO(3)/Pt device can be simultaneously manipulated by the electric field, which makes it to be a promising candidate for the multifunctional memory devices.