Electric field modification of magnetism in Au/La(2/3)Ba(1/3)MnO(3)/Pt device

The La(2/3)Ba(1/3)MnO(3) film is deposited in a CMOS-compatible Pt/Ti/SiO(2)/Si substrate with the oxygen pressure of 10 Pa for investigating magnetoelectric effect. Bipolar resistive switching effect with excellent endurance and retention is observed in this Au/La(2/3)Ba(1/3)MnO(3)/Pt device. Throu...

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Autores principales: Xiong, Y. Q., Zhou, W. P., Li, Q., Cao, Q. Q., Tang, T., Wang, D. H., Du, Y. W.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4523834/
https://www.ncbi.nlm.nih.gov/pubmed/26238932
http://dx.doi.org/10.1038/srep12766
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author Xiong, Y. Q.
Zhou, W. P.
Li, Q.
Cao, Q. Q.
Tang, T.
Wang, D. H.
Du, Y. W.
author_facet Xiong, Y. Q.
Zhou, W. P.
Li, Q.
Cao, Q. Q.
Tang, T.
Wang, D. H.
Du, Y. W.
author_sort Xiong, Y. Q.
collection PubMed
description The La(2/3)Ba(1/3)MnO(3) film is deposited in a CMOS-compatible Pt/Ti/SiO(2)/Si substrate with the oxygen pressure of 10 Pa for investigating magnetoelectric effect. Bipolar resistive switching effect with excellent endurance and retention is observed in this Au/La(2/3)Ba(1/3)MnO(3)/Pt device. Through this effect, a significant nonvolatile change of magnetization is obtained in this device as well. The change of magnetization can be understood by the break and repair of the -Mn(3+)-O(2−)-Mn(4+)- chains induced by the electric field through the oxygen vacancies migration. The resistance and magnetization of the Au/La(2/3)Ba(1/3)MnO(3)/Pt device can be simultaneously manipulated by the electric field, which makes it to be a promising candidate for the multifunctional memory devices.
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spelling pubmed-45238342015-08-05 Electric field modification of magnetism in Au/La(2/3)Ba(1/3)MnO(3)/Pt device Xiong, Y. Q. Zhou, W. P. Li, Q. Cao, Q. Q. Tang, T. Wang, D. H. Du, Y. W. Sci Rep Article The La(2/3)Ba(1/3)MnO(3) film is deposited in a CMOS-compatible Pt/Ti/SiO(2)/Si substrate with the oxygen pressure of 10 Pa for investigating magnetoelectric effect. Bipolar resistive switching effect with excellent endurance and retention is observed in this Au/La(2/3)Ba(1/3)MnO(3)/Pt device. Through this effect, a significant nonvolatile change of magnetization is obtained in this device as well. The change of magnetization can be understood by the break and repair of the -Mn(3+)-O(2−)-Mn(4+)- chains induced by the electric field through the oxygen vacancies migration. The resistance and magnetization of the Au/La(2/3)Ba(1/3)MnO(3)/Pt device can be simultaneously manipulated by the electric field, which makes it to be a promising candidate for the multifunctional memory devices. Nature Publishing Group 2015-08-04 /pmc/articles/PMC4523834/ /pubmed/26238932 http://dx.doi.org/10.1038/srep12766 Text en Copyright © 2015, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Xiong, Y. Q.
Zhou, W. P.
Li, Q.
Cao, Q. Q.
Tang, T.
Wang, D. H.
Du, Y. W.
Electric field modification of magnetism in Au/La(2/3)Ba(1/3)MnO(3)/Pt device
title Electric field modification of magnetism in Au/La(2/3)Ba(1/3)MnO(3)/Pt device
title_full Electric field modification of magnetism in Au/La(2/3)Ba(1/3)MnO(3)/Pt device
title_fullStr Electric field modification of magnetism in Au/La(2/3)Ba(1/3)MnO(3)/Pt device
title_full_unstemmed Electric field modification of magnetism in Au/La(2/3)Ba(1/3)MnO(3)/Pt device
title_short Electric field modification of magnetism in Au/La(2/3)Ba(1/3)MnO(3)/Pt device
title_sort electric field modification of magnetism in au/la(2/3)ba(1/3)mno(3)/pt device
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4523834/
https://www.ncbi.nlm.nih.gov/pubmed/26238932
http://dx.doi.org/10.1038/srep12766
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