Electric field modification of magnetism in Au/La(2/3)Ba(1/3)MnO(3)/Pt device

The La(2/3)Ba(1/3)MnO(3) film is deposited in a CMOS-compatible Pt/Ti/SiO(2)/Si substrate with the oxygen pressure of 10 Pa for investigating magnetoelectric effect. Bipolar resistive switching effect with excellent endurance and retention is observed in this Au/La(2/3)Ba(1/3)MnO(3)/Pt device. Throu...

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Detalles Bibliográficos
Autores principales: Xiong, Y. Q., Zhou, W. P., Li, Q., Cao, Q. Q., Tang, T., Wang, D. H., Du, Y. W.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4523834/
https://www.ncbi.nlm.nih.gov/pubmed/26238932
http://dx.doi.org/10.1038/srep12766

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4523834/
https://www.ncbi.nlm.nih.gov/pubmed/26238932
http://dx.doi.org/10.1038/srep12766

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