Dynamics of Optically-Generated Carriers in Si (100) and Si (111) Substrate-Grown GaAs/AlGaAs Core-Shell Nanowires

GaAs/Al(0.1)Ga(0.9)As core-shell nanowires (CSNWs), with average lateral size of 125 nm, were grown on gold nanoparticle-activated Si (100) and Si (111) substrates via molecular beam epitaxy. Room temperature-photoluminescence (RT-PL) from the samples showed bulk-like GaAs and Al(0.1)Ga(0.9)As bandg...

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Detalles Bibliográficos
Autores principales: delos Santos, Ramon, Ibañes, Jasher John, Balgos, Maria Herminia, Jaculbia, Rafael, Afalla, Jessica Pauline, Bailon-Somintac, Michelle, Estacio, Elmer, Salvador, Arnel, Somintac, Armando, Que, Christopher, Tsuzuki, Satoshi, Yamamoto, Kohji, Tani, Masahiko
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4545763/
https://www.ncbi.nlm.nih.gov/pubmed/26293496
http://dx.doi.org/10.1186/s11671-015-1050-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4545763/
https://www.ncbi.nlm.nih.gov/pubmed/26293496
http://dx.doi.org/10.1186/s11671-015-1050-9

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