GaAs-Based Superluminescent Light-Emitting Diodes with 290-nm Emission Bandwidth by Using Hybrid Quantum Well/Quantum Dot Structures

A high-performance superluminescent light-emitting diode (SLD) based upon a hybrid quantum well (QW)/quantum dot (QD) active element is reported and is assessed with regard to the resolution obtainable in an optical coherence tomography system. We report on the appearance of strong emission from hig...

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Detalles Bibliográficos
Autores principales: Chen, Siming, Li, Wei, Zhang, Ziyang, Childs, David, Zhou, Kejia, Orchard, Jonathan, Kennedy, Ken, Hugues, Maxime, Clarke, Edmund, Ross, Ian, Wada, Osamu, Hogg, Richard
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4547973/
https://www.ncbi.nlm.nih.gov/pubmed/26303141
http://dx.doi.org/10.1186/s11671-015-1049-2
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author Chen, Siming
Li, Wei
Zhang, Ziyang
Childs, David
Zhou, Kejia
Orchard, Jonathan
Kennedy, Ken
Hugues, Maxime
Clarke, Edmund
Ross, Ian
Wada, Osamu
Hogg, Richard
author_facet Chen, Siming
Li, Wei
Zhang, Ziyang
Childs, David
Zhou, Kejia
Orchard, Jonathan
Kennedy, Ken
Hugues, Maxime
Clarke, Edmund
Ross, Ian
Wada, Osamu
Hogg, Richard
author_sort Chen, Siming
collection PubMed
description A high-performance superluminescent light-emitting diode (SLD) based upon a hybrid quantum well (QW)/quantum dot (QD) active element is reported and is assessed with regard to the resolution obtainable in an optical coherence tomography system. We report on the appearance of strong emission from higher order optical transition from the QW in a hybrid QW/QD structure. This additional emission broadening method contributes significantly to obtaining a 3-dB linewidth of 290 nm centered at 1200 nm, with 2.4 mW at room temperature.
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spelling pubmed-45479732015-08-28 GaAs-Based Superluminescent Light-Emitting Diodes with 290-nm Emission Bandwidth by Using Hybrid Quantum Well/Quantum Dot Structures Chen, Siming Li, Wei Zhang, Ziyang Childs, David Zhou, Kejia Orchard, Jonathan Kennedy, Ken Hugues, Maxime Clarke, Edmund Ross, Ian Wada, Osamu Hogg, Richard Nanoscale Res Lett Nano Express A high-performance superluminescent light-emitting diode (SLD) based upon a hybrid quantum well (QW)/quantum dot (QD) active element is reported and is assessed with regard to the resolution obtainable in an optical coherence tomography system. We report on the appearance of strong emission from higher order optical transition from the QW in a hybrid QW/QD structure. This additional emission broadening method contributes significantly to obtaining a 3-dB linewidth of 290 nm centered at 1200 nm, with 2.4 mW at room temperature. Springer US 2015-08-25 /pmc/articles/PMC4547973/ /pubmed/26303141 http://dx.doi.org/10.1186/s11671-015-1049-2 Text en © Chen et al. 2015 Open Access This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Chen, Siming
Li, Wei
Zhang, Ziyang
Childs, David
Zhou, Kejia
Orchard, Jonathan
Kennedy, Ken
Hugues, Maxime
Clarke, Edmund
Ross, Ian
Wada, Osamu
Hogg, Richard
GaAs-Based Superluminescent Light-Emitting Diodes with 290-nm Emission Bandwidth by Using Hybrid Quantum Well/Quantum Dot Structures
title GaAs-Based Superluminescent Light-Emitting Diodes with 290-nm Emission Bandwidth by Using Hybrid Quantum Well/Quantum Dot Structures
title_full GaAs-Based Superluminescent Light-Emitting Diodes with 290-nm Emission Bandwidth by Using Hybrid Quantum Well/Quantum Dot Structures
title_fullStr GaAs-Based Superluminescent Light-Emitting Diodes with 290-nm Emission Bandwidth by Using Hybrid Quantum Well/Quantum Dot Structures
title_full_unstemmed GaAs-Based Superluminescent Light-Emitting Diodes with 290-nm Emission Bandwidth by Using Hybrid Quantum Well/Quantum Dot Structures
title_short GaAs-Based Superluminescent Light-Emitting Diodes with 290-nm Emission Bandwidth by Using Hybrid Quantum Well/Quantum Dot Structures
title_sort gaas-based superluminescent light-emitting diodes with 290-nm emission bandwidth by using hybrid quantum well/quantum dot structures
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4547973/
https://www.ncbi.nlm.nih.gov/pubmed/26303141
http://dx.doi.org/10.1186/s11671-015-1049-2
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