Cargando…
Evidence of Filamentary Switching in Oxide-based Memory Devices via Weak Programming and Retention Failure Analysis
Further progress in high-performance microelectronic devices relies on the development of novel materials and device architectures. However, the components and designs that are currently in use have reached their physical limits. Intensive research efforts, ranging from device fabrication to perform...
| Autores principales: | , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2015
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4555098/ https://www.ncbi.nlm.nih.gov/pubmed/26324073 http://dx.doi.org/10.1038/srep13599 |