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Electrically Tunable and Negative Schottky Barriers in Multi-layered Graphene/MoS(2) Heterostructured Transistors
We fabricated multi-layered graphene/MoS(2) heterostructured devices by positioning mechanically exfoliated bulk graphite and single-crystalline 2H-MoS(2) onto Au metal pads on a SiO(2)/Si substrate via a contamination-free dry transfer technique. We also studied the electrical transport properties...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group
2015
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4558713/ https://www.ncbi.nlm.nih.gov/pubmed/26333680 http://dx.doi.org/10.1038/srep13743 |