A double barrier memristive device

We present a quantum mechanical memristive Nb/Al/Al(2)O(3)/Nb(x)O(y)/Au device which consists of an ultra-thin memristive layer (Nb(x)O(y)) sandwiched between an Al(2)O(3) tunnel barrier and a Schottky-like contact. A highly uniform current distribution for the LRS (low resistance state) and HRS (hi...

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Detalles Bibliográficos
Autores principales: Hansen, M., Ziegler, M., Kolberg, L., Soni, R., Dirkmann, S., Mussenbrock, T., Kohlstedt, H.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4562229/
https://www.ncbi.nlm.nih.gov/pubmed/26348823
http://dx.doi.org/10.1038/srep13753

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4562229/
https://www.ncbi.nlm.nih.gov/pubmed/26348823
http://dx.doi.org/10.1038/srep13753

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