Chemical Visualization of a GaN p-n junction by XPS

We report on an operando XPS investigation of a GaN diode, by recording the Ga2p(3/2) peak position under both forward and reverse bias. Areal maps of the peak positions under reverse bias are completely decoupled with respect to doped regions and allow a novel chemical visualization of the p-n junc...

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Autores principales: Caliskan, Deniz, Sezen, Hikmet, Ozbay, Ekmel, Suzer, Sefik
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4566124/
https://www.ncbi.nlm.nih.gov/pubmed/26359762
http://dx.doi.org/10.1038/srep14091
_version_ 1782389675302846464
author Caliskan, Deniz
Sezen, Hikmet
Ozbay, Ekmel
Suzer, Sefik
author_facet Caliskan, Deniz
Sezen, Hikmet
Ozbay, Ekmel
Suzer, Sefik
author_sort Caliskan, Deniz
collection PubMed
description We report on an operando XPS investigation of a GaN diode, by recording the Ga2p(3/2) peak position under both forward and reverse bias. Areal maps of the peak positions under reverse bias are completely decoupled with respect to doped regions and allow a novel chemical visualization of the p-n junction in a 2-D fashion. Other electrical properties of the device, such as leakage current, resistivity of the domains are also tapped via recording line-scan spectra. Application of a triangular voltage excitation enables probing photoresponse of the device.
format Online
Article
Text
id pubmed-4566124
institution National Center for Biotechnology Information
language English
publishDate 2015
publisher Nature Publishing Group
record_format MEDLINE/PubMed
spelling pubmed-45661242015-09-15 Chemical Visualization of a GaN p-n junction by XPS Caliskan, Deniz Sezen, Hikmet Ozbay, Ekmel Suzer, Sefik Sci Rep Article We report on an operando XPS investigation of a GaN diode, by recording the Ga2p(3/2) peak position under both forward and reverse bias. Areal maps of the peak positions under reverse bias are completely decoupled with respect to doped regions and allow a novel chemical visualization of the p-n junction in a 2-D fashion. Other electrical properties of the device, such as leakage current, resistivity of the domains are also tapped via recording line-scan spectra. Application of a triangular voltage excitation enables probing photoresponse of the device. Nature Publishing Group 2015-09-11 /pmc/articles/PMC4566124/ /pubmed/26359762 http://dx.doi.org/10.1038/srep14091 Text en Copyright © 2015, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Caliskan, Deniz
Sezen, Hikmet
Ozbay, Ekmel
Suzer, Sefik
Chemical Visualization of a GaN p-n junction by XPS
title Chemical Visualization of a GaN p-n junction by XPS
title_full Chemical Visualization of a GaN p-n junction by XPS
title_fullStr Chemical Visualization of a GaN p-n junction by XPS
title_full_unstemmed Chemical Visualization of a GaN p-n junction by XPS
title_short Chemical Visualization of a GaN p-n junction by XPS
title_sort chemical visualization of a gan p-n junction by xps
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4566124/
https://www.ncbi.nlm.nih.gov/pubmed/26359762
http://dx.doi.org/10.1038/srep14091
work_keys_str_mv AT caliskandeniz chemicalvisualizationofaganpnjunctionbyxps
AT sezenhikmet chemicalvisualizationofaganpnjunctionbyxps
AT ozbayekmel chemicalvisualizationofaganpnjunctionbyxps
AT suzersefik chemicalvisualizationofaganpnjunctionbyxps

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