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Chemical Visualization of a GaN p-n junction by XPS

We report on an operando XPS investigation of a GaN diode, by recording the Ga2p(3/2) peak position under both forward and reverse bias. Areal maps of the peak positions under reverse bias are completely decoupled with respect to doped regions and allow a novel chemical visualization of the p-n junc...

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Detalles Bibliográficos
Autores principales:	Caliskan, Deniz, Sezen, Hikmet, Ozbay, Ekmel, Suzer, Sefik
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group 2015
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4566124/ https://www.ncbi.nlm.nih.gov/pubmed/26359762 http://dx.doi.org/10.1038/srep14091

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