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Carrier multiplication detected through transient photocurrent in device-grade films of lead selenide quantum dots

In carrier multiplication, the absorption of a single photon results in two or more electron–hole pairs. Quantum dots are promising materials for implementing carrier multiplication principles in real-life technologies. So far, however, most of research in this area has focused on optical studies of...

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Autores principales: Gao, Jianbo, Fidler, Andrew F., Klimov, Victor I.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Pub. Group 2015
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4569798/
https://www.ncbi.nlm.nih.gov/pubmed/26345390
http://dx.doi.org/10.1038/ncomms9185
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author Gao, Jianbo
Fidler, Andrew F.
Klimov, Victor I.
author_facet Gao, Jianbo
Fidler, Andrew F.
Klimov, Victor I.
author_sort Gao, Jianbo
collection PubMed
description In carrier multiplication, the absorption of a single photon results in two or more electron–hole pairs. Quantum dots are promising materials for implementing carrier multiplication principles in real-life technologies. So far, however, most of research in this area has focused on optical studies of solution samples with yet to be proven relevance to practical devices. Here we report ultrafast electro-optical studies of device-grade films of electronically coupled quantum dots that allow us to observe multiplication directly in the photocurrent. Our studies help rationalize previous results from both optical spectroscopy and steady-state photocurrent measurements and also provide new insights into effects of electric field and ligand treatments on multiexciton yields. Importantly, we demonstrate that using appropriate chemical treatments of the films, extra charges produced by carrier multiplication can be extracted from the quantum dots before they are lost to Auger recombination and hence can contribute to photocurrent of practical devices.
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spelling pubmed-45697982015-09-28 Carrier multiplication detected through transient photocurrent in device-grade films of lead selenide quantum dots Gao, Jianbo Fidler, Andrew F. Klimov, Victor I. Nat Commun Article In carrier multiplication, the absorption of a single photon results in two or more electron–hole pairs. Quantum dots are promising materials for implementing carrier multiplication principles in real-life technologies. So far, however, most of research in this area has focused on optical studies of solution samples with yet to be proven relevance to practical devices. Here we report ultrafast electro-optical studies of device-grade films of electronically coupled quantum dots that allow us to observe multiplication directly in the photocurrent. Our studies help rationalize previous results from both optical spectroscopy and steady-state photocurrent measurements and also provide new insights into effects of electric field and ligand treatments on multiexciton yields. Importantly, we demonstrate that using appropriate chemical treatments of the films, extra charges produced by carrier multiplication can be extracted from the quantum dots before they are lost to Auger recombination and hence can contribute to photocurrent of practical devices. Nature Pub. Group 2015-09-08 /pmc/articles/PMC4569798/ /pubmed/26345390 http://dx.doi.org/10.1038/ncomms9185 Text en Copyright © 2015, Nature Publishing Group, a division of Macmillan Publishers Limited. All Rights Reserved. http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Gao, Jianbo
Fidler, Andrew F.
Klimov, Victor I.
Carrier multiplication detected through transient photocurrent in device-grade films of lead selenide quantum dots
title Carrier multiplication detected through transient photocurrent in device-grade films of lead selenide quantum dots
title_full Carrier multiplication detected through transient photocurrent in device-grade films of lead selenide quantum dots
title_fullStr Carrier multiplication detected through transient photocurrent in device-grade films of lead selenide quantum dots
title_full_unstemmed Carrier multiplication detected through transient photocurrent in device-grade films of lead selenide quantum dots
title_short Carrier multiplication detected through transient photocurrent in device-grade films of lead selenide quantum dots
title_sort carrier multiplication detected through transient photocurrent in device-grade films of lead selenide quantum dots
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4569798/
https://www.ncbi.nlm.nih.gov/pubmed/26345390
http://dx.doi.org/10.1038/ncomms9185
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