Monolithic III–V on Silicon Plasmonic Nanolaser Structure for Optical Interconnects

Monolithic integration of III–V semiconductor lasers with Si circuits can reduce cost and enhance performance for optical interconnects dramatically. We propose and investigate plasmonic III–V nanolasers as monolithically integrated light source on Si chips due to many advantages. First, these III–V...

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Detalles Bibliográficos
Autores principales: Li, Ning, Liu, Ke, Sorger, Volker J., Sadana, Devendra K.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4570205/
https://www.ncbi.nlm.nih.gov/pubmed/26369698
http://dx.doi.org/10.1038/srep14067

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4570205/
https://www.ncbi.nlm.nih.gov/pubmed/26369698
http://dx.doi.org/10.1038/srep14067

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