Fabrication of UV Photodetector on TiO(2)/Diamond Film

The properties of ultraviolet (UV) photodetector fabricated on TiO(2)/diamond film were investigated. Single crystal diamond layer was grown on high-pressure-high-temperature Ib-type diamond substrate by microwave plasma chemical vapor deposition method, upon which TiO(2) film was prepared directly using radio frequency magnetron sputtering technique in Ar and O(2) mixing atmosphere. Tungsten was used as electrode material to fabricate metal-semiconductor-metal UV photodetector. The dark current is measured to be 1.12 pA at 30 V. The photo response of the device displays an obvious selectivity between UV and visible light, and the UV-to-visible rejection ratio can reach 2 orders of magnitude. Compared with that directly on diamond film, photodetector on TiO(2)/diamond film shows higher responsivity.